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Growth, dispersion, and electronic devices of nitrogen-doped single-wall carbon nanotubes

Authors

  • Antonios Oikonomou,

    1. School of Computer Science, The University of Manchester, Oxford Road, Manchester M13 9PL, UK
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  • Toma Susi,

    1. Nanomaterials Group, Department of Applied Physics, Aalto University School of Science, PO Box 15100, 00076 Aalto, Finland
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  • Esko I. Kauppinen,

    1. Nanomaterials Group, Department of Applied Physics, Aalto University School of Science, PO Box 15100, 00076 Aalto, Finland
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  • Aravind Vijayaraghavan

    Corresponding author
    1. School of Computer Science, The University of Manchester, Oxford Road, Manchester M13 9PL, UK
    2. Centre for Mesoscience and Nanotechnology, The University of Manchester, Oxford Road, Manchester M13 9PL, UK
    • Phone: +44 161 275 0136, Fax: +44 161 275 4527
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Abstract

This paper describes the complete processes from growth to electronic devices of nitrogen-doped single-wall carbon nanotubes (N-SWCNTs). The N-SWCNTs were synthesized using a floating catalyst chemical vapor deposition method. The dry-deposited N-SWCNT films were dispersed in N-methylpyrolidone followed by sonication and centrifugation steps to yield a stable dispersion of N-SWCNTs in solution. The length and diameter distribution as well as concentration of N-SWCNTs in solution were measured by atomic force microscopy and optical absorption spectroscopy, respectively. The N-SWCNTs were then assembled into electronic devices using bottom–up dielectrophoresis and characterized as field-effect transistors. Finally, the potential for application of N-SWCNTs in sensors is discussed.

original image

The three stages of N-doped SWCNT processing: (a) growth and collection on filter, (b) dispersion in NMP, and (c) dielectrophoretic assembly into transistor device.

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