Encapsulating graphene by ultra-thin alumina for reducing process contaminations
Article first published online: 6 NOV 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (b)
Volume 249, Issue 12, pages 2526–2529, December 2012
How to Cite
Dauber, J., Terrés, B., Trellenkamp, S. and Stampfer, C. (2012), Encapsulating graphene by ultra-thin alumina for reducing process contaminations. Phys. Status Solidi B, 249: 2526–2529. doi: 10.1002/pssb.201200417
- Issue published online: 4 DEC 2012
- Article first published online: 6 NOV 2012
- Manuscript Accepted: 14 SEP 2012
- Manuscript Revised: 22 AUG 2012
- Manuscript Received: 22 JUN 2012
We discuss a fabrication process for making graphene devices based on encapsulated graphene for reducing contaminations during individual processing steps. A 3–5 nm alumina layer is deposited directly after exfoliating graphene, protecting it during the entire processing. We show that the visibility of the encapsulated graphene is sufficient to identify graphene flakes and Raman spectra exhibit the characteristic finger print. We perform transport measurements to study the sample quality and compare the results with graphene samples processed without an alumina layer. In particular we observe a higher yield and significantly reduced contact resistances for devices fabricated with the here presented method.
Graphene flake with metal (Cr/Au) contacts covered with an ultra-thin (3–5 nm) oxidized aluminum layer (left) and without the layer (right).