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Encapsulating graphene by ultra-thin alumina for reducing process contaminations

Authors

  • Jan Dauber,

    Corresponding author
    1. II. Institute of Physics B, RWTH Aachen University, 52074 Aachen, Germany
    2. JARA Fundamentals of Future Information Technologies, 52425 Jülich, Germany
    3. Peter Grünberg Institute (PGI-8/9), Forschungszentrum Jülich, 52425 Jülich, Germany
    • Phone: +49 241 80 27138, Fax: +49 241 80 22306
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  • Bernat Terrés,

    1. II. Institute of Physics B, RWTH Aachen University, 52074 Aachen, Germany
    2. JARA Fundamentals of Future Information Technologies, 52425 Jülich, Germany
    3. Peter Grünberg Institute (PGI-8/9), Forschungszentrum Jülich, 52425 Jülich, Germany
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  • Stefan Trellenkamp,

    1. Peter Grünberg Institute (PGI-8/9), Forschungszentrum Jülich, 52425 Jülich, Germany
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  • Christoph Stampfer

    1. II. Institute of Physics B, RWTH Aachen University, 52074 Aachen, Germany
    2. JARA Fundamentals of Future Information Technologies, 52425 Jülich, Germany
    3. Peter Grünberg Institute (PGI-8/9), Forschungszentrum Jülich, 52425 Jülich, Germany
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Abstract

We discuss a fabrication process for making graphene devices based on encapsulated graphene for reducing contaminations during individual processing steps. A 3–5 nm alumina layer is deposited directly after exfoliating graphene, protecting it during the entire processing. We show that the visibility of the encapsulated graphene is sufficient to identify graphene flakes and Raman spectra exhibit the characteristic finger print. We perform transport measurements to study the sample quality and compare the results with graphene samples processed without an alumina layer. In particular we observe a higher yield and significantly reduced contact resistances for devices fabricated with the here presented method.

original image

Graphene flake with metal (Cr/Au) contacts covered with an ultra-thin (3–5 nm) oxidized aluminum layer (left) and without the layer (right).

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