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Leakage current in 808 nm laser diodes analyzed using high hydrostatic pressure and temperature



Threshold current in 808 nm GaAsP/AlGaAs laser diode has been measured as a function of pressure (up to 1.8 GPa) and temperature (from 80 to 300 K). The results have been analyzed in order to separate leakage current from radiative current and to determine the effective barrier for leakage and its pressure dependence. Our data indicates that both X and L minima in the barriers and in the claddings contribute to leakage.

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