High-pressure study of the thermoelectric properties of various oxides (ZnO, Ti2O3, FexOy) and FeAs-based compounds

Authors

  • Natalia V. Morozova,

    1. Urals Division, Institute of Metal Physics of Russian Academy of Sciences, 18 S. Kovalevskaya Str., Yekaterinburg 620990, Russia
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  • Iuliia A. Khmeleva,

    Corresponding author
    1. Urals Division, Institute of Metal Physics of Russian Academy of Sciences, 18 S. Kovalevskaya Str., Yekaterinburg 620990, Russia
    • Phone: +7 343 378 3545, Fax: +7 343 374 5244
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  • Sergey V. Ovsyannikov,

    1. Bayerisches Geoinstitut, Universität Bayreuth, Universitätsstrasse 30, Bayreuth 95447, Germany
    2. Urals Division, Institute for Solid State Chemistry of Russian Academy of Sciences, 91 Pervomayskaya Str., Yekaterinburg 620990, Russia
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  • Alexander E. Karkin,

    1. Urals Division, Institute of Metal Physics of Russian Academy of Sciences, 18 S. Kovalevskaya Str., Yekaterinburg 620990, Russia
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  • Vladimir V. Shchennikov

    Corresponding author
    1. Urals Division, Institute of Metal Physics of Russian Academy of Sciences, 18 S. Kovalevskaya Str., Yekaterinburg 620990, Russia
    • Phone: +7 343 378 3739, Fax: +7 343 374 5244
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Abstract

In the present work the results of investigation of the thermoelectric (TE) properties of some Zn, Ti and Fe oxides and FeAs-based compounds under compression up to 20 GPa are reported. The data obtained of thermoelectric power S dependence on pressure P for the materials under consideration revealed some new features of the electron properties of both initial and high-pressure phases (RS-ZnO). For FeAs-based compounds the complex behavior of S on P was found depending probably on the contribution of d-states in the conductivity. The decreasing of the semiconductors gap has been established under pressure for the narrow-gap semiconductors Ti2O3 and Fe2O3; the sign inversion being observed in the first oxide pointing to the change of dominant type of the charge carries. Pressure cycling of Fe2O3 led to a nanostructured state with the modified electronic properties. TE data at high pressure allowed the electronic properties of the materials with the different type of the electron structure to be detailed.

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