SEARCH

SEARCH BY CITATION

Keywords:

  • III–V semiconductors;
  • dynamic compression;
  • time-resolved spectroscopy;
  • uniaxial strain

Abstract

Large strains in semiconductors are expected to be more common in future electronic devices utilizing nanostructure components. Hydrostatic pressure (HP) and uniaxial stress (US) loading have inherent limitations for probing the desired strain conditions. Uniaxial strain loading, achieved in dynamic compression experiments, is particularly attractive for attaining well-defined, large strains and to complement HP and US loading. Recent dynamic compression studies on III–V semiconductors (GaN, GaP, and GaAs) are summarized to review notable findings ranging from improved deformation potentials to free carrier properties. These findings demonstrate the benefits of dynamic compression experiments for semiconductor research.