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Influence of crystal polarity on Mg incorporation in ZnO

Authors

  • Yutaka Adachi,

    Corresponding author
    • Optoelectronic Materials Group, Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan
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  • Naoki Ohashi,

    1. Optoelectronic Materials Group, Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan
    2. NIMS Saint-Gobain Research Center of Excellence for Advanced Materials, NIMS, Tsukuba, Ibaraki, Japan
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  • Isao Sakaguchi,

    1. Ceramics Chemistry Group, Optical and Electronics Materials Unit, NIMS, Tsukuba, Ibaraki, Japan
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  • Hajime Haneda

    1. NIMS Open Innovation Center, Tsukuba, Ibaraki, Japan
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Corresponding author: e-mail adachi.yutaka@nims.go.jp, Phone: +81 29 860 4438, Fax: +81 29 855 1196

Abstract

In this study, we investigated the influence of polarity on Mg incorporation in ZnO films grown using pulsed laser deposition. The photoluminescence (PL) measurements of (Zn,Mg)O films grown on the c(+) and c(−) faces of ZnO revealed that the peak position of the near-band-edge emission for the films on the c(−)-face was at a shorter wavelength than that for the films on the c(+)-face. This result indicates that the Mg content in the films on the c(−)-face is higher than that for the films on the c(+)-face regardless of the same growth conditions used, except for the polarity of the substrates. This difference in the Mg content in the c(+)- and c(−)-polar films can result from the difference in the value of the sticking coefficients for Zn atoms on the c(+)- and c(−)-faces. We also demonstrated that polarity determination can be possible by (Zn,Mg)O film deposition followed by PL mapping measurement.

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