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Lateral modulation doping of two-dimensional electron or hole gas

Authors

  • A. Dmitriev,

    1. Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
    2. A. F. Ioffe Institute of the Russian Academy of Sciences, St. Petersburg, Russia
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  • M. Shur

    Corresponding author
    1. Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
    • Phone: (518) 276 2201, Fax: (518) 276 2990
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Abstract

We show that the two-dimensional electron gas (2DEG) injected from the region with a higher concentration into the region with a lower concentration decays very slowly. In contrast to the three-dimensional case, where the concentration is an exponential function of distance from the injecting contact, the 2D concentration is inversely proportional to this distance. Moreover, using passivation with a high dielectric constant or a floating metal gate placed close to the 2DEG (with separation smaller than the Bohr radius) could dramatically enhance the 2DEG concentration decay length. This effect enables lateral remote electron transfer in 2DEG, similar to remote doping in heterostructures, and can be used to optimize the electric field and/or electron concentration profile.

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