Influence of indium concentration and growth temperature on the structural and optoelectronic properties of indium selenide thin films
Article first published online: 19 SEP 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (b)
Volume 250, Issue 1, pages 95–102, January 2013
How to Cite
Sreekumar, R., Sajeesh, T. H., Abe, T., Kashiwaba, Y., Sudha Kartha, C. and Vijayakumar, K. P. (2013), Influence of indium concentration and growth temperature on the structural and optoelectronic properties of indium selenide thin films. Phys. Status Solidi B, 250: 95–102. doi: 10.1002/pssb.201248268
- Issue published online: 8 JAN 2013
- Article first published online: 19 SEP 2012
- Manuscript Accepted: 23 AUG 2012
- Manuscript Revised: 22 AUG 2012
- Manuscript Received: 12 JUN 2012
- Inter University Accelerator Centre (IUAC), New Delhi, India
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