Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes
Article first published online: 26 NOV 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (b)
Volume 250, Issue 2, pages 283–290, February 2013
How to Cite
Schiavon, D., Binder, M., Peter, M., Galler, B., Drechsel, P. and Scholz, F. (2013), Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes. Phys. Status Solidi B, 250: 283–290. doi: 10.1002/pssb.201248286
- Issue published online: 7 FEB 2013
- Article first published online: 26 NOV 2012
- Manuscript Accepted: 24 OCT 2012
- Manuscript Revised: 1 OCT 2012
- Manuscript Received: 25 JUN 2012
- German Federal Ministry of Education and Research (BMBF). Grant Number: 13N9974
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