Raman-scattering probe of anharmonic effects due to temperature and composition in InGaN
Version of Record online: 29 NOV 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (b)
Volume 250, Issue 2, pages 329–333, February 2013
How to Cite
Kong, J. F., Shen, W. Z. and Guo, Q. X. (2013), Raman-scattering probe of anharmonic effects due to temperature and composition in InGaN. Phys. Status Solidi B, 250: 329–333. doi: 10.1002/pssb.201248374
- Issue online: 7 FEB 2013
- Version of Record online: 29 NOV 2012
- Manuscript Accepted: 6 NOV 2012
- Manuscript Revised: 23 OCT 2012
- Manuscript Received: 13 AUG 2012
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