Interpretation of experimental dependencies of the switching effect in GeSbTe

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Abstract

An electronic–thermal model of the switching effect in chalcogenide glassy semiconductors (CGSs) is investigated. The model fits the experimental current–voltage characteristics (CVC) of GeSbTe films in both the ohmic and exponential regions. Also, the model is in good agreement with the experimental dependences of threshold voltage and threshold current on temperature and thickness. The results indicate that multiphonon tunnel ionization (MTI) of negative-U centers and heating is a possible mechanism for the CVC nonlinearity and the switching effect in chalcogenides.

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