Resonant tunneling-based optoelectronic effect in p–i–n nanocrystalline silicon solar cell
Version of Record online: 14 JUN 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (b)
Volume 250, Issue 9, pages 1832–1836, September 2013
How to Cite
Chen, J., Liu, Y., Zhang, Y. and Cao, H. (2013), Resonant tunneling-based optoelectronic effect in p–i–n nanocrystalline silicon solar cell. Phys. Status Solidi B, 250: 1832–1836. doi: 10.1002/pssb.201248459
- Issue online: 6 SEP 2013
- Version of Record online: 14 JUN 2013
- Manuscript Revised: 23 MAY 2013
- Manuscript Accepted: 23 MAY 2013
- Manuscript Received: 27 SEP 2012
- Innovation Program of Shanghai Municipal Education Commission. Grant Number: 12YZ145
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