The topological transition from order to disorder in crystalline silicon was investigated by a computer simulation procedure. The gradually introduction of topological Wooten–Winer–Weaire defect states makes the crystal change in a more and more disordered assembly of atoms. The characterization of deformation energy around a single defect state is analyzed. The topological transition from graphene structure to an amorphous carbon layer, by introduction of a high number of Stone–Wales defect-type states was evidenced. The comparison of the disordered structure in tetrahedrally bonded semiconductors (silicon) and a two-dimensional network based on graphene structure was made.