Raman spectroscopy investigation of defect occurrence in graphene grown on copper single crystals

Authors


Abstract

The presented study focuses on the appearance of defects in graphene grown on Cu(100), (110) and (111) single crystals by low pressure chemical vapour deposition (CVD) from methane with either 12C or 13C isotope. By analysing the Raman D band, we assume the defects originate mainly on boundaries between tilted graphene domains grown on Cu(100) and Cu(110), in contrast to graphene grown on Cu(111), where the D band is scarce in the Raman spectra. The other main source of defects may come from graphene edges around small adlayers randomly present in the samples.

Ancillary