Raman spectroscopy of strongly doped CVD-graphene

Authors

  • Zuzana Komínková,

    Corresponding author
    1. J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Czech Republic
    2. Department of Physical Chemistry, Faculty of Science, Palacký University in Olomouc, Czech Republic
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  • Martin Kalbáč

    Corresponding author
    1. J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Czech Republic
    2. Department of Physical Chemistry, Faculty of Science, Palacký University in Olomouc, Czech Republic
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Abstract

Chemical vapor-deposition-grown graphene covered with a polyelectrolyte layer has been studied using Raman spectroscopy and in situ Raman spectroelectrochemistry. The doping of graphene leads to a shift of the Fermi level, which is reflected in changes of Raman spectra. A change of the Raman shift of the G band as a function of the electrode potential has been analyzed in this study to evaluate the doping level of graphene. The frequency shift of the G mode suggested an extreme doping of graphene (up 1014 charge carriers per cm2), without obvious damage of graphene.

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