Low pressure chemical vapor deposition synthesis of hexagonal boron nitride on polycrystalline metal foils
Article first published online: 4 OCT 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (b)
Volume 250, Issue 12, pages 2727–2731, December 2013
How to Cite
Gibb, A., Alem, N. and Zettl, A. (2013), Low pressure chemical vapor deposition synthesis of hexagonal boron nitride on polycrystalline metal foils. Phys. Status Solidi B, 250: 2727–2731. doi: 10.1002/pssb.201300088
- Issue published online: 4 DEC 2013
- Article first published online: 4 OCT 2013
- Manuscript Accepted: 3 SEP 2013
- Manuscript Revised: 14 AUG 2013
- Manuscript Received: 16 APR 2013
- chemical vapor deposition;
- hexagonal boron nitride
The two-dimensional sp2-bonded material hexagonal boron nitride (h-BN) has unique electronic, thermal, mechanical, and chemical properties. It has recently found use as an ideal substrate for graphene-based electronic devices. We here describe synthesis of mono- to few-layer h-BN films using low pressure chemical vapor deposition (LPCVD) from borazine, with nickel, copper and platinum employed as catalytic substrates, and transfer of some of these ﬁlms using a non-polymer method. Characterization of the films via Raman spectroscopy and transmission electron microscopy (TEM) is performed.
Chemical vapor deposition synthesis of hexagonal boron nitride from borazine using metallic substrates.