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Anisotropic low-field electron diffusion coefficient and mobility in wurtzite indium nitride

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Abstract

This paper presents the theoretical analysis of anisotropic low-field electron diffusion coefficient and mobility in wurtzite (WZ) indium nitride (InN). The electron diffusion coefficient and mobility as functions of temperature and doping concentration are investigated in detail. For low concentration, the diffusion coefficient and mobility is higher at low temperature. However, the results are opposite for high concentration. The anisotropy of the band structure is also taken into consideration by a Herring–Volt transform. The diffusion coefficient and mobility in the ΓA direction (c-direction) is higher than that in the ΓM direction (basal plane) for a smaller effective mass.

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