Microstructural failure in Ge2Sb2Te5 phase change memory cell
Version of Record online: 24 SEP 2013
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (b)
Volume 251, Issue 2, pages 435–438, February 2014
How to Cite
Kim, Y. T. and Kim, Y. H. (2014), Microstructural failure in Ge2Sb2Te5 phase change memory cell. Phys. Status Solidi B, 251: 435–438. doi: 10.1002/pssb.201350003
- Issue online: 10 FEB 2014
- Version of Record online: 24 SEP 2013
- Manuscript Accepted: 27 AUG 2013
- Manuscript Revised: 26 AUG 2013
- Manuscript Received: 4 JUN 2013
- Samsung Electronics and the Korean Ministry of Industry
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