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Multi-pin dc glow discharge PECVD for uniform growth of vertically oriented graphene at atmospheric pressure

Authors

  • Zheng Bo,

    Corresponding author
    1. State Key Laboratory of Clean Energy Utilization, Institute for Thermal Power Engineering, Department of Energy Engineering, Zhejiang University, Hangzhou, Zhejiang Province, P. R. China
    • Corresponding author: e-mail bozh@zju.edu.cn, Phone: +86 571 8795 3290, Fax: +86 571 8795 2438

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  • Wei Ma,

    1. State Key Laboratory of Clean Energy Utilization, Institute for Thermal Power Engineering, Department of Energy Engineering, Zhejiang University, Hangzhou, Zhejiang Province, P. R. China
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  • Pengxiang Wang,

    1. Department of Aerospace Engineering, College of Engineering, Pennsylvania State University, State College, PA, USA
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  • Erka Wu,

    1. State Key Laboratory of Clean Energy Utilization, Institute for Thermal Power Engineering, Department of Energy Engineering, Zhejiang University, Hangzhou, Zhejiang Province, P. R. China
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  • Weicheng Yang,

    1. Department of Industrial Engineering, School of Mechanical and Electrical Engineering, Harbin Institute of Technology, Harbin, Heilongjiang Province, P. R. China
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  • Kehan Yu,

    1. Department of Chemical Engineering, Case Western Reserve University, Cleveland, OH, USA
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  • Xiaopeng Zhang,

    1. State Key Laboratory of Clean Energy Utilization, Institute for Thermal Power Engineering, Department of Energy Engineering, Zhejiang University, Hangzhou, Zhejiang Province, P. R. China
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  • Jianhua Yan,

    1. State Key Laboratory of Clean Energy Utilization, Institute for Thermal Power Engineering, Department of Energy Engineering, Zhejiang University, Hangzhou, Zhejiang Province, P. R. China
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  • Kefa Cen

    1. State Key Laboratory of Clean Energy Utilization, Institute for Thermal Power Engineering, Department of Energy Engineering, Zhejiang University, Hangzhou, Zhejiang Province, P. R. China
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Abstract

Atmospheric normal glow discharge plasma-enhanced chemical vapor deposition (ANGD-PECVD) holds great potential for the industrial in-line continuous growth of vertically oriented graphene (VG) nanosheets. However, conventional single-pin-to-plate electrode arrangement owns the drawback of producing a non-uniform electric field, subsequently leading to a fairly poor uniformity of the as-grown VG nanosheets. This work offers a proof of concept on a novel multi-pin ANGD-PECVD method for the uniform growth of VG nanosheets. Based on the numerical calculation, the dual-pin ANGD can provide a more uniform electric field compared with the single-pin counterpart, due to the compensation from adjacent pins and a lower integrated curvature of the discharge electrode. Experimental results demonstrate that ANGD with a four-pin discharge electrode is able to significantly improve the uniformity of the localized current density at the growth substrate, and further realize the growth of VG nanosheets with excellent homogeneity in terms of morphology and structure. Successful application of the as-grown VG nanosheets working as the active materials of a supercapacitor is illustrated at the end of this work.

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