Chalcogenide systems at the border of the glass-formation domain: A key for understanding the memory-switching phenomena

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Abstract

The compositions in the ternary chalcogenide systems from the demarcation region between the glass-formation domain (GFD) and the partially or fully crystalline formation domain seem to exhibit outstanding properties. We have shown in this paper that the compositions with the best memory-switching properties are situated at the border of the GFD in many systems. One can use this correlation to find new phase-change materials with better switching properties or to discover GFDs that were not observed yet.

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