Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy

Authors

  • Huijie Li,

    Corresponding author
    1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    2. Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    Search for more papers by this author
  • Xianglin Liu,

    1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    2. Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    Search for more papers by this author
  • Ling Sang,

    1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    2. Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    Search for more papers by this author
  • Jianxia Wang,

    1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    2. Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    Search for more papers by this author
  • Dongdong Jin,

    1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    2. Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    Search for more papers by this author
  • Heng Zhang,

    1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    2. Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    Search for more papers by this author
  • Shaoyan Yang,

    Corresponding author
    1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    2. Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    Search for more papers by this author
  • Shuman Liu,

    1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    2. Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    Search for more papers by this author
  • Wei Mao,

    1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, P. R. China
    Search for more papers by this author
  • Yue Hao,

    1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, P. R. China
    Search for more papers by this author
  • Qinsheng Zhu,

    1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    2. Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    Search for more papers by this author
  • Zhanguo Wang

    1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    2. Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    Search for more papers by this author

Abstract

We have directly measured the valence-band offsets (VBOs) of wurtzite C-plane and A-plane AlN/GaN heterojunctions by X-ray photoelectron spectroscopy. The VBOs were determined to be 0.82 ± 0.15 and 0.63 ± 0.15 eV for the C-plane and A-plane AlN/GaN heterojunctions, respectively. The discrepancy in VBOs of heterojunctions with different orientations is mainly due to the spontaneous polarization effect. The VBO of the nonpolar heterojunction is closer to the intrinsic value since the A-plane samples show no polarization effects.

Ancillary