All-electrical detection of spin Hall effect in semiconductors
Version of Record online: 7 FEB 2014
© 2014 The Authors. Phys. Status Solidi B is published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
physica status solidi (b)
Special Issue: Semiconductor Spintronics
Volume 251, Issue 9, pages 1725–1735, September 2014
How to Cite
Ehlert, M., Song, C., Ciorga, M., Hupfauer, T., Shiogai, J., Utz, M., Schuh, D., Bougeard, D. and Weiss, D. (2014), All-electrical detection of spin Hall effect in semiconductors. Phys. Status Solidi B, 251: 1725–1735. doi: 10.1002/pssb.201350206
- Issue online: 3 SEP 2014
- Version of Record online: 7 FEB 2014
- Manuscript Accepted: 23 DEC 2013
- Manuscript Revised: 19 DEC 2013
- Manuscript Received: 15 SEP 2013
- Deutsche Forschungsgemeinschaft DFG. Grant Numbers: SPP1285, SFB689
- gallium arsenide;
- nonlocal resistance;
- spin Hall effect;
- spin injection
Since the prediction of the spin Hall effect more than 40 years ago, significant progress was made in theoretical description as well as in experimental observation, especially in the last decade. In this article, we present three different concepts and measurement geometries for all-electrical detection of the direct and the inverse spin Hall effect in semiconductors. Based on experiments with n- and p-doped GaAs microstructures, we describe our experimental approaches and methods to experimentally identify the spin Hall effect and compare our results to previous experiments and theoretical considerations.
Device geometry for the detection of the direct spin Hall effect.