Ultrafast spin dynamics in magnetic wide-bandgap semiconductors



Magnetic wide-bandgap semiconductors based on ZnO and GaN are promising for spintronics applications and interesting for studying the interaction of charge carriers with magnetic ions. We use time-resolved Faraday rotation spectroscopy to investigate the ultrafast spin dynamics in Zn1−xMnxO and Ga1−xMnxN. The mean field electron–magnetic ion exchange constant is determined by measuring the transient effective g-factor (g*) for these materials. The relevant scattering processes are revealed by analyzing the ensemble spin dephasing time math formula.