Quantum interference in HgTe structures

Authors

  • I. V. Gornyi,

    1. Institut für Nanotechnologie, Karlsruhe Institute of Technology, Karlsruhe, Germany
    2. A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia
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  • V. Yu. Kachorovskii,

    1. A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia
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  • A. D. Mirlin,

    Corresponding author
    1. Institut für Nanotechnologie, Karlsruhe Institute of Technology, Karlsruhe, Germany
    2. Institut für Theorie der kondensierten Materie and DFG Center for Functional Nanostructures, Karlsruhe Institute of Technology, Karlsruhe, Germany
    3. Petersburg Nuclear Physics Institute, St. Petersburg, Russia
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  • P. M. Ostrovsky

    1. Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, Stuttgart, Germany
    2. L. D. Landau Institute for Theoretical Physics, Russian Academy of Sciences, Moscow, Russia
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Abstract

We study quantum transport in HgTe/HgCdTe quantum wells under the condition that the chemical potential is located outside of the band gap. We first analyze symmetry properties of the effective Bernevig–Hughes–Zhang Hamiltonian and the relevant symmetry-breaking perturbations. Based on this analysis, we overview possible patterns of symmetry breaking that govern the quantum interference (weak localization or weak antilocalization) correction to the conductivity in two-dimensional HgTe/HgCdTe samples. Further, we perform a microscopic calculation of the quantum correction beyond the diffusion approximation. Finally, the interference correction and the low-field magnetoresistance in a quasi-one-dimensional geometry are analyzed.

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