Atomistic origin of rapid crystallization of Ag-doped Ge–Sb–Te alloys: A joint experimental and theoretical study

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Abstract

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Ge–Sb–Te (GST) alloys that lie near the pseudobinary GeTe–Sb2Te3 tie line are widely used phase-change memory materials (PCMM) for application in optical and electronic memory. Prasai et al. employed extended X-ray absorption fine structure (EXAFS) analyses and ab initio molecular dynamics (AIMD) to investigate the structural properties of Ag-doped GST alloys. The investigation (pp. 1785–1790) demonstrates that the computer models are consistent with EXAFS experiments. The study reveals that Ag-doping promotes the conversion of Ge from tetrahedral to octahedral, and enhances the speed of crystallization of GST, a key to its utility as a PCMM.

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