Recent and forthcoming publications in pss

Silicon nanowires – a versatile technology platform

Thomas Mikolajick, André Heinzig, Jens Trom-mer, Sebastian Pregl, Matthias Grube, Gianaurelio Cuniberti, and Walter M. Weber

Based on their inherent small diameter, silicon nanowires offer unique properties that enable electron devices, sensors as well as solar cells and lithium batteries with the potential to significantly outperform their thin film or bulk counterparts. This article gives an overview of important device applications of silicon nanowires. Starting with nanowire fabrication, the different device concepts are introduced and their most important features reviewed. Spe-cial focus is put on different reconfigurable transistor concepts recently described in literature.

Phys. Status Solidi RRL (2013) DOI 10.1002∕pssr.201307247


A micro-electro-mechanical memory based on the structural phase transition of VO2

Rafmag Cabrera, Emmanuelle Merced, and Nelson Sepúlveda

The work by Cabrera et al. presents a significant improvement in the previous advances on the memory applications of vanadium dioxide. The authors demonstrate a monolithically integrated micro-electromechanical (MEMS) memory device, where the mechanical states are programmed solely by electric signals. The fundamental operation of the device is based on the structural phase transition and the inherent hysteretic behavior of vanadium dioxide thin films. Although the phase change of the multifunc-tional VO2 thin films comes with abrupt changes in the material properties, a control system was implemented and the system is designed to be very robust for fluctuating background temperatures.

Phys. Status Solidi A (2013) DOI 10.1002∕pssa.201330021


Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping

Adisak Boonchun and Walter R. L. Lambrecht

While atomic nitrogen on the oxygen site in ZnO has too deep a level for p-type doping, a nitrogen molecule (N2) sitting on the Zn site is shown by means of first-principles calculations to have a shallow delocalized defect state suitable for p-type doping. The hyperfine structure and g-factor of the pro-posed N2 on Zn model are consistent with a previously observed Electron Paramagnetic Resonance center in ZnO. The identification of the shallow level with N2 on Zn, results in several new recommendations for achieving p-type doping: (i) work in Zn-poor, O-rich conditions, (ii) use N2 rather than atomic or excited or other N species such as NO, NH3 to incorporate nitrogen, (iii) as already established experimentally, use the Zn-polar surface.

Phys. Status Solidi B (2013) DOI 10.1002∕pssb.201300010