Properties of the new electronic device material LaGdO3 (Phys. Status Solidi B 1/2014)

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Abstract

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As the semiconductor technology approaches size limitation (according to Moore's law), significant efforts need to be focused to develop alternative gate dielectric materials that can facilitate low electrical functional thicknesses for future logic and memory nodes. Over the last few years there has been considerable interest in the application of inter-lanthanide compounds in modern electronic devices. Researchers at University of Puerto Rico led by Professor Ram S. Katiyar have developed a novel alternative low-loss high-k dielectric lanthanum gadolinium oxide in their laboratory which is a significant development for nano-electronic device applications, such as dynamic random access memories (DRAMs), resistive switching memory elements (RRAMs) and related logic electronic components (MOSFETs). Pavunny et al. (pp. 131–139) utilized X-ray crystallography and Raman spectroscopy to characterize the crystal structure of this oxide and also discussed its high-temperature phase transition near 900 K. This new material has a dielectric constant greater than five times that of silicon oxide which is higher than that of any of the presently used hafnium-based high-k dielectrics. Therefore it can have a broader impact on feature size reduction in the fabrication of CMOS logic and memory devices.

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