physica status solidi (b)

Cover image for Vol. 240 Issue 2

November 2003

Volume 240, Issue 2

Pages 263–458

    1. Nitrides as spintronic materials (page 263)

      Tomasz Dietl

      Article first published online: 6 NOV 2003 | DOI: 10.1002/pssb.200390016

    2. Microstructure and electronic properties of InGaN alloys (pages 273–284)

      F. A. Ponce, S. Srinivasan, A. Bell, L. Geng, R. Liu, M. Stevens, J. Cai, H. Omiya, H. Marui and S. Tanaka

      Article first published online: 6 NOV 2003 | DOI: 10.1002/pssb.200303527

    3. Structure analysis of ELO-GaN using a 2 × 4 μm2 micro-beam X-ray of an 8-GeV storage ring (pages 285–288)

      T. Miyajima, M. Takeya, S. Goto, S. Tomiya, S. Takeda, H. Kurihara, K. Watanabe, M. Kato, N. Hara, Y. Tsusaka and J. Matsui

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303323

    4. Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals (pages 289–292)

      F. Tuomisto, T. Suski, H. Teisseyre, M. Krysko, M. Leszczynski, B. Lucznik, I. Grzegory, S. Porowski, D. Wasik, A. Witowski, W. Gebicki, P. Hageman and K. Saarinen

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303259

    5. Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy (pages 297–300)

      T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vickers and C. J. Humphreys

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303262

    6. Field-compensated quaternary InAlGaN/GaN quantum wells (pages 301–304)

      F. Kalaïtzakis, M. Androulidaki, N. T. Pelekanos, E. Dimakis, E. Bellet-Amalric, D. Jalabert, D. Cengher, K. Tsagaraki, E. Aperathitis, G. Konstantinidis and A. Georgakilas

      Article first published online: 6 NOV 2003 | DOI: 10.1002/pssb.200303536

    7. Characterization of MOVPE-grown GaN layers on GaAs (111)B with a cubic-GaN (111) epitaxial intermediate layer (pages 305–309)

      S. Sanorpim, E. Takuma, R. Katayama, H. Ichinose, K. Onabe and Y. Shiraki

      Article first published online: 6 NOV 2003 | DOI: 10.1002/pssb.200303463

    8. The effect of nitrogen on self-assembled GaInNAs quantum dots grown on GaAs (pages 310–313)

      A. Nishikawa, Y. G. Hong and C. W. Tu

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303258

    9. Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy (pages 314–317)

      J. Brault, E. Bellet-Amalric, S. Tanaka, F. Enjalbert, D. Le Si Dang, E. Sarigiannidou, J.-L. Rouviere, G. Feuillet and B. Daudin

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303268

    10. Growth of GaN on a-plane sapphire: in-plane epitaxial relationships and lattice parameters (pages 318–321)

      T. Paskova, V. Darakchieva, E. Valcheva, P. P. Paskov, B. Monemar and M. Heuken

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303368

    11. Stranski–Krastanow growth of stacked GaN quantum dots with intense photoluminescence (pages 322–325)

      K. Hoshino, S. Kako and Y. Arakawa

      Article first published online: 10 OCT 2003 | DOI: 10.1002/pssb.200303426

    12. The effect of Gallium gallium adsorbate on SiC(0001) surface for GaN by MBE (pages 326–329)

      K. Jeganathan, M. Shimizu, T. Ide and H. Okumura

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303283

    13. Shallow donors in GaN (pages 330–336)

      J. A. Freitas Jr., W. J. Moore, B. V. Shanabrook, G. C. B. Braga, D. D. Koleske, S. K. Lee, S. S. Park and J. Y. Han

      Article first published online: 10 OCT 2003 | DOI: 10.1002/pssb.200303402

    14. Recombination dynamics in low-dimensional nitride semiconductors (pages 337–343)

      Y. Kawakami, A. Kaneta, K. Omae, A. Shikanai, K. Okamoto, G. Marutsuki, Y. Narukawa, T. Mukai and Sg. Fujita

      Article first published online: 6 NOV 2003 | DOI: 10.1002/pssb.200303427

    15. Exciton localization in InGaN/GaN single quantum well structures (pages 344–347)

      D. M. Graham, A. Soltani Vala, P. Dawson, M. J. Godfrey, M. J. Kappers, T. M. Smeeton, J. S. Barnard, C. J. Humphreys and E. J. Thrush

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303338

    16. Exciton–exciton correlation effects on FWM in GaN (pages 348–351)

      Satoru Adachi, Hirotaka Sasakura, Shunichi Muto, Kouji Hazu, Takayuki Sota, Shigefusa F. Chichibu and Takashi Mukai

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303254

    17. Localization characteristics of photoluminescence decay dynamics in an InxGa1−xAs1−yNy/GaAs single quantum well (pages 352–355)

      M. Nakayama, K. Tokuoka, K. Nomura, T. Yamada, A. Moto and S. Takagishi

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303260

    18. Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN (pages 356–359)

      Yasuo Koide, D. E. Walker Jr., B. D. White, L. J. Brillson, T. Itoh, R. L. McCreery, Masanori Murakami, S. Kamiyama, H. Amano and I. Akasaki

      Article first published online: 7 OCT 2003 | DOI: 10.1002/pssb.200303279

    19. Impact of exciton localization on the optical properties of non-polar M-plane In0.1Ga0.9N/GaN multiple quantum wells (pages 360–363)

      Yue Jun Sun, Oliver Brandt, Sven Cronenberg, Holger T. Grahn and Klaus H. Ploog

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303291

    20. Carrier capture times in InGaN/GaN multiple quantum wells (pages 364–367)

      W. H. Fan, S. M. Olaizola, T. Wang, P. J. Parbrook, J.-P. R. Wells, D. J. Mowbray, M. S. Skolnick and A. M. Fox

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303389

    21. Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells (pages 368–371)

      Koichi Okamoto, Shigeo Fujita, Yoichi Kawakami and Axel Scherer

      Article first published online: 10 OCT 2003 | DOI: 10.1002/pssb.200303391

    22. Improvement of luminescence capability of Tb3+-related emission by AlxGa1−xN (pages 372–375)

      Y. Nakanishi, A. Wakahara, H. Okada, A. Yoshida, T. Ohshima and H. Itoh

      Article first published online: 6 NOV 2003 | DOI: 10.1002/pssb.200303479

    23. Localized biexcitons in AlxGa1−xN ternary alloy epitaxial layers (pages 376–379)

      Y. Yamada, C. Sasaki, Y. Ueki, T. Taguchi, S. Tanaka and Y. Nakagawa

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303455

    24. Photoreflectance studiesof N- and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG (pages 380–383)

      A. T. Winzer, R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann, Y. Smorchkova, U. K. Mishra and J. S. Speck

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303351

    25. Measurement of optical nonlinearities from intersubband transitions in GaN/AlGaN quantum wells at 1.5 μm (pages 384–387)

      Gang Chen, R. Rapaport, O. Mitrofanov, C. Gmachl and H. M. Ng

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303371

    26. Long-lived excitons up to 1 μs in GaN/AlN self-assembled quantum dots (pages 388–391)

      S. Kako, M. Miyamura, K. Hoshino and Y. Arakawa

      Article first published online: 10 OCT 2003 | DOI: 10.1002/pssb.200303316

    27. The hot carrier dynamics in InGaN multi-quantum well structure (pages 392–395)

      A. Shikanai, K. Kojima, K. Omae, Y. Kawakami, Y. Narukawa, T. Mukai and Sg. Fujita

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303256

    28. Effects of heavy nitrogen doping in III–V semiconductors – How well does the conventional wisdom holdfor the dilute nitrogen “III–V-N alloys”? (pages 396–403)

      Yong Zhang, B. Fluegel, M. C. Hanna, J. F. Geisz, L.-W. Wang and A. Mascarenhas

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303329

    29. Characterization of the GaN-rich side of GaNP grown by metal-organic chemical vapor deposition (pages 404–407)

      Yuhzoh Tsuda, Hirokazu Mouri, Masahiro Araki, Yoshihiro Ueta, Takayuki Yuasa and Mototaka Taneya

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303297

    30. Isoelectronic doping of AlGaN alloys (pages 408–411)

      S. V. Novikov, L. X. Zhao, I. Harrison and C. T. Foxon

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303257

    31. Narrow bandgap group III-nitride alloys (pages 412–416)

      J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu and William J. Schaff

      Article first published online: 6 NOV 2003 | DOI: 10.1002/pssb.200303475

    32. Control of electron density in InN by Si doping and optical properties of Si-doped InN (pages 417–420)

      M. Higashiwaki, T. Inushima and T. Matsui

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303349

    33. Photoluminescence and optical absorption edge for MOVPE-grown InN (pages 421–424)

      K. Sugita, H. Takatsuka, A. Hashimoto and A. Yamamoto

      Article first published online: 10 OCT 2003 | DOI: 10.1002/pssb.200303459

    34. Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys (pages 425–428)

      V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, A. N. Smirnov, I. N. Goncharuk, A. V. Sakharov, D. A. Kurdyukov, M. V. Baidakova, V. A. Vekshin, S. V. Ivanov, J. Aderhold, J. Graul, A. Hashimoto and A. Yamamoto

      Article first published online: 10 OCT 2003 | DOI: 10.1002/pssb.200303448

    35. Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate (pages 429–432)

      T. Yamaguchi, Y. Saito, C. Morioka, K. Yorozu, T. Araki, A. Suzuki and Y. Nanishi

      Article first published online: 6 NOV 2003 | DOI: 10.1002/pssb.200303404

    36. Nitrides as spintronic materials (pages 433–439)

      Tomasz Dietl

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303265

    37. Optical and magnetic properties of the DyN/GaN superlattice (pages 440–442)

      Y. K. Zhou, M. S. Kim, N. Teraguchi, A. Suzuki, Y. Nanishi and H. Asahi

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303321

    38. Optimization of the growth of Ga1− xMnxN epilayers using plasma-assisted MBE (pages 443–446)

      S. Kuroda , E. Bellet-Amalric, X. Biquard, J. Cibert, R. Giraud, S. Marcet and H. Mariette

      Article first published online: 30 SEP 2003 | DOI: 10.1002/pssb.200303367

    39. Thermal conductivity of GaN crystals grown by high pressure method (pages 447–450)

      A. Jeżowski, P. Stachowiak, T. Plackowski, T. Suski, S. Krukowski, M. Boćkowski, I. Grzegory, B. Danilchenko and T. Paszkiewicz

      Article first published online: 10 OCT 2003 | DOI: 10.1002/pssb.200303341

    40. Polarization-induced surface band bendings of GaN films studied by synchrotron radiation photoemission spectroscopy (pages 451–454)

      Ho Won Jang, Kyu Wook Ihm, Tai-Hee Kang, Jung-Hee Lee and Jong-Lam Lee

      Article first published online: 6 NOV 2003 | DOI: 10.1002/pssb.200303543

    41. Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal (pages 455–458)

      J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d'Yerville, E. Centeno, D. Cassagne and J. P. Albert

      Article first published online: 10 OCT 2003 | DOI: 10.1002/pssb.200303309

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