physica status solidi (b)

Cover image for Vol. 241 Issue 12

October 2004

Volume 241, Issue 12

Pages R57–R69, 2643–2865

    1. Dielectric and optical studies of phase transitions in [(CH3)2NH2]5Cd2CuCl11 crystal (pages R57–R59)

      Yu. Elyashevskyy, S. Dacko, B. Kosturek, Z. Czapla and V. B. Kapustyanik

      Version of Record online: 20 AUG 2004 | DOI: 10.1002/pssb.200409056

    2. Dynamics of the phonon-induced electron transfer between semiconductor bulk and surface states (pages R60–R62)

      Andreas Zeiser, Norbert Bücking, Jörg Götte, Jens Förstner, Patrick Hahn, Wolf Gero Schmidt and Andreas Knorr

      Version of Record online: 8 SEP 2004 | DOI: 10.1002/pssb.200409060

    3. Raman spectroscopy with UV excitation on untwinned single crystals of YBa2Cu3O7–δ (pages R63–R66)

      S. Bahrs, S. Reich, A. Zwick, A. R. Goñi, W. Bacsa, G. Nieva and C. Thomsen

      Version of Record online: 7 SEP 2004 | DOI: 10.1002/pssb.200409061

    4. Low-frequency vibrational modes of viruses used for nanoelectronic self-assemblies (pages R67–R69)

      Vladimir A. Fonoberov and Alexander A. Balandin

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200409062

    5. Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures (page 2643)

      P. Ruterana, P. Singh, S. Kret, G. Jurczak, G. Maciejewski, P. Dluzewski, H. K. Cho, R. J. Choi, H. J. Lee and E. K. Suh

      Version of Record online: 17 SEP 2004 | DOI: 10.1002/pssb.200490017

    6. José Roberto Leite (1942–2004) (pages 2649–2650)

      President Adalberto Fazzio, Chairman Sylvio Canuto, Klaus Lischka and Editor-in-Chief Martin Stutzmann

      Version of Record online: 17 SEP 2004 | DOI: 10.1002/pssb.200490018

    7. Novel cladding structure for ZnSe-based white LEDs with longer lifetime over 10,000 hours (pages 2659–2663)

      T. Nakamura, K. Katayama, H. Mori and S. Fujiwara

      Version of Record online: 3 SEP 2004 | DOI: 10.1002/pssb.200404973

    8. Study on the stability of the high-brightness white LED (pages 2664–2667)

      Z. Z. Chen, J. Zhao, Z. X. Qin, X. D. Hu, T. J. Yu, Y. Z. Tong, Z. J. Yang, X. Y. Zhou, G. Q. Yao, B. Zhang and G. Y. Zhang

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200404977

    9. Carrier injection and light emission in visible and UV nitride LEDs by modeling (pages 2668–2671)

      S. Yu. Karpov, K. A. Bulashevich, I. A. Zhmakin, V. O. Nestoklon, V. F. Mymrin and Yu. N. Makarov

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405023

    10. Efficient conversion of blue light into white light by means of rare-earth-ion-doped transparent material (pages 2672–2675)

      Y. Mita, Takeshi Kobayashi, Yoshinobu Miyamoto, Osamu Ishii and Naruhito Sawanobori

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405089

    11. Optically pumped lasing and gain formation properties in blue Inx Ga1–x N MQWs (pages 2676–2680)

      K. Kojima, A. Shikanai, K. Omae, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai and Sg. Fujita

      Version of Record online: 3 SEP 2004 | DOI: 10.1002/pssb.200405096

    12. Thermal analysis of GaN-based LEDs using the finite element method and unit temperature profile approach (pages 2681–2684)

      Tae Hee Lee, Lan Kim, Woong Joon Hwang, C. C. Lee and Moo Whan Shin

      Version of Record online: 16 SEP 2004 | DOI: 10.1002/pssb.200405099

    13. Growth of bulk GaN on GaN/sapphire templates by a high N2 pressure method (pages 2685–2688)

      M. Boćkowski, I. Grzegory, B. Łucznik, S. Krukowski, M. Wróblewski, P. Kwiatkowski, K. Jasik, W. Wawer, J. Borysiuk, G. Kamler and S. Porowski

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200404979

    14. Structural analysis of thick GaN films grown by hydride vapour phase epitaxy (pages 2689–2692)

      Pierre Ruterana, Jun Chen, Gérard Nouet, Benliang Lei, Haohua Ye, Guanghui Yu, Ming Qi and Aizhen Li

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200404985

    15. Photoluminescence and Raman scattering in Mg and P co-implanted GaN epitaxial layers (pages 2693–2697)

      K. T. Liu, Y. K. Su, S. J. Chang, K. Onomitsu and Y. Horikoshi

      Version of Record online: 30 AUG 2004 | DOI: 10.1002/pssb.200405012

    16. High-quality GaN films grown on Si(111) by a reversed Stranski–Krastanov growth mode (pages 2698–2702)

      N. C. Chen, C. F. Shih, C. A. Chang, A. P. Chiu, S. D. Teng and K. S. Liu

      Version of Record online: 3 SEP 2004 | DOI: 10.1002/pssb.200405016

    17. Photo-induced absorption change for InGaN film by violet laser diode (pages 2703–2707)

      Masahiro Nomura, Munetaka Arita, Satoshi Ashihara, Masao Nishioka, Yasuhiko Arakawa, Tsutomu Shimura and Kazuo Kuroda

      Version of Record online: 30 AUG 2004 | DOI: 10.1002/pssb.200405026

    18. Eu concentration dependence on structural and optical properties of Eu-doped GaN (pages 2708–2712)

      Hyungjin Bang, Shinichi Morishima, Takaharu Tsukamoto, Zhiqiang Li, Junji Sawahata, Jongwon Seo, Mikio Takiguchi, Yoshio Bando and Katsuhiro Akimoto

      Version of Record online: 30 AUG 2004 | DOI: 10.1002/pssb.200405027

    19. Efficiency enhancement of InGaN/GaN light-emitting diodes utilizing island-like GaN substrate (pages 2713–2716)

      J. T. Hsu, J. D. Tsay, Y. D. Guo, C. C. Chuo and S. M. Pan

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405033

    20. Cathodoluminescence of polycrystalline GaN grown by a hot wall epitaxy technique (pages 2717–2721)

      Y. Inoue, T. Hoshino, S. Takeda, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi and S. Sakakibara

      Version of Record online: 3 SEP 2004 | DOI: 10.1002/pssb.200405058

    21. The effects of strained sapphire (0001) substrate on the structural quality of GaN epilayer (pages 2722–2725)

      Yong Suk Cho, Jeakyun Kim, Young Ju Park, Hyunseok Na, Hee Jin Kim, Hyun Jin Kim, Euijoon Yoon and Young Woon Kim

      Version of Record online: 30 AUG 2004 | DOI: 10.1002/pssb.200405059

    22. The influence of aluminum composition of AlxGa1–xAs in distributed Bragg reflector on surface morphology (pages 2726–2729)

      B. Kim, M. Yoon, S. Kim, J. Son, B. Kim, J. Jhin and D. Byun

      Version of Record online: 3 SEP 2004 | DOI: 10.1002/pssb.200405069

    23. Spatially resolved cathodoluminescence study on AlGaN layer fabricated by air-bridged lateral epitaxial growth (pages 2730–2734)

      Akihiko Ishibashi, Yasutoshi Kawaguchi, Gaku Sugahara, Toshitaka Shimamoto, Toshiya Yokogawa, Yoichi Yamada, Yusuke Ueki, Kohzo Nakamura and Tsunemasa Taguchi

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405073

    24. Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures (pages 2735–2738)

      P. Ruterana, P. Singh, S. Kret, G. Jurczak, G. Maciejewski, P. Dluzewski, H. K. Cho, R. J. Choi, H. J. Lee and E. K. Suh

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405084

    25. Highly luminescent cubic GaN microcrystals grown on GaAs(001) substrates by RF-MBE (pages 2739–2743)

      Ryuji Katayama, Kentaro Onabe and Yasuhiro Shiraki

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405086

    26. Quantum chemical study on substituent effect of gas-phase reactions in III–V nitride semiconductor crystal growth (pages 2744–2748)

      Takanobu Okada, Kentaro Doi, Koichi Nakamura and Akitomo Tachibana

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405087

    27. Stimulated emission from GaN nanocolumns (pages 2754–2758)

      Akihiko Kikuchi, Kouji Yamano, Makoto Tada and Katsumi Kishino

      Version of Record online: 16 SEP 2004 | DOI: 10.1002/pssb.200405103

    28. Impurity band in magnesium-doped GaN layers grown by metalorganic chemical vapor deposition (pages 2759–2762)

      D. S. Kang, M. G. Cheong, S.-K. Lee, E.-K. Suh, C.-H. Hong and H. J. Lee

      Version of Record online: 16 SEP 2004 | DOI: 10.1002/pssb.200405115

    29. Direct heteroepitaxial lateral overgrowth of GaN on stripe-patterned sapphire substrates with very thin SiO2 masks (pages 2763–2766)

      H. S. Cheong, M. K. Yoo, H. G. Kim, S. J. Bae, C. S. Kim, C.-H. Hong, J. H. Baek, H. J. Kim, Y. M. Yu and H. K. Cho

      Version of Record online: 30 AUG 2004 | DOI: 10.1002/pssb.200405118

    30. White light emitting silicon nanocrystals as nanophosphor (pages 2767–2770)

      Soojin Lee, Woon Jo Cho, Il Ki Han, Won Jun Choi and Jung Il Lee

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200404971

    31. Metal/GaN reaction chemistry and their electrical properties (pages 2771–2774)

      C. C. Kim, S. K. Seol, J. K. Kim, J.-L. Lee, Y. Hwu, P. Ruterana, G. Magaritondo and J. H. Je

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200404978

    32. Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach (pages 2775–2778)

      Sang-Kwon Lee, Heon-Jin Choi, Peter Pauzauskie, Peidong Yang, Nam-Kyu Cho, Hyo-Derk Park, Eun-Kyung Suh, Kee-Young Lim and Hyung-Jae Lee

      Version of Record online: 30 AUG 2004 | DOI: 10.1002/pssb.200404989

    33. Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots (pages 2779–2782)

      S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Taliercio, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne and J. Massies

      Version of Record online: 16 SEP 2004 | DOI: 10.1002/pssb.200404996

    34. Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off (pages 2783–2786)

      Tongjun Yu, Zilan Li, Z. X. Qin, Z. Z. Chen, Z. J. Yang, X. D. Hu and G. Y. Zhang

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405024

    35. Structural and optical properties of rare-earth doped quantum dots grown by plasma-assisted MBE (pages 2787–2790)

      Y. Hori, T. Andreev, D. Jalabert, X. Biquard, E. Monroy, M. Tanaka, O. Oda, Le Si Dang and B. Daudin

      Version of Record online: 16 SEP 2004 | DOI: 10.1002/pssb.200405029

    36. Optical characterization of InAsN single quantum wells grown by RF-MBE (pages 2791–2794)

      M. Kuroda, R. Katayama, K. Onabe and Y. Shiraki

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405032

    37. Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy (pages 2802–2805)

      Hwa-Mok Kim, Hosang Lee, Suk Il Kim, Sung Ryong Ryu, Tae Won Kang and Kwan Soo Chung

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405043

    38. First-principle study on electronic properties of gallium nitride and aluminium nitride nanowires (pages 2806–2810)

      Kentaro Doi, Nobuyuki Higashimaki, Yoshihiko Kawakami, Koichi Nakamura and Akitomo Tachibana

      Version of Record online: 30 AUG 2004 | DOI: 10.1002/pssb.200405064

    39. Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy (pages 2811–2815)

      J. S. Kim, E. K. Kim, H. J. Kim, E. Yoon, I.-W. Park and Y. J. Park

      Version of Record online: 3 SEP 2004 | DOI: 10.1002/pssb.200405068

    40. Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN (pages 2820–2824)

      J. Yan, M. J. Kappers, A. Crossley, C. McAleese, W. A. Phillips and C. J. Humphreys

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405056

    41. MBE growth of Zn-polar ZnO on MOCVD-ZnO templates (pages 2825–2829)

      Hiroyuki Kato, Michihiro Sano, Kazuhiro Miyamoto, Takafumi Yao, Bao-Ping Zhang, Katsuki Wakatsuki and Yusaburo Segawa

      Version of Record online: 3 SEP 2004 | DOI: 10.1002/pssb.200405055

    42. Optical and electrical properties of ZnO doped with nitrogen (pages 2830–2834)

      Seungmo Kang, Kyoungchul Shin, Kandasamy Prabakar and Chongmu Lee

      Version of Record online: 3 SEP 2004 | DOI: 10.1002/pssb.200405071

    43. Epitaxial growth of hexagonal and cubic InN films (pages 2839–2842)

      K. Nishida, Y. Kitamura, Y. Hijikata, H. Yaguchi and S. Yoshida

      Version of Record online: 30 AUG 2004 | DOI: 10.1002/pssb.200405049

    44. Growth and properties of In-rich InGaN films grown on (0001) sapphire by RF-MBE (pages 2843–2848)

      M. Kurouchi, T. Araki, H. Naoi, T. Yamaguchi, A. Suzuki and Y. Nanishi

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405121

    45. Properties of the fundamental absorption edge of InN crystals investigated by optical reflection and transmission spectra (pages 2849–2853)

      Y. Ishitani, K. Xu, S. B. Che, H. Masuyama, W. Terashima, M. Yoshitani, N. Hashimoto, K. Akasaka, T. Ohkubo and A. Yoshikawa

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200405097

    46. Magnetic properties of GaMnN grown via molecular beam epitaxy using a single precursor (pages 2854–2857)

      K. J. Lee, K. H. Kim, F. C. Yu, W. S. Im, C. X. Gao, D. J. Kim, H. J. Kim and Y. E. Ihm

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssb.200404975

    47. A study of magnetic clusters in Co-doped ZnO using neutron scattering (pages 2858–2861)

      Hyeon-Jun Lee, Gi-Hun Ryu, Sung-Kyu Kim, Shin Ae Kim, Chang-Hee Lee, Se-Young Jeong and Chae Ryong Cho

      Version of Record online: 30 AUG 2004 | DOI: 10.1002/pssb.200405005

    48. Electron beam induced light emission from the polythiophene derivative/ITO structure (pages 2862–2865)

      Gennady N. Panin, Tae Won Kang and Haiwon Lee

      Version of Record online: 16 SEP 2004 | DOI: 10.1002/pssb.200405102

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