physica status solidi (b)

Cover image for Vol. 243 Issue 7

June 2006

Volume 243, Issue 7

Pages 1403–1717

    1. Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction (page 1403)

      M. Drakopoulos, M. Laügt, T. Riemann, B. Beaumont and P. Gibart

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200690013

  1. Original Papers

    1. Top of page
    2. Original Papers
    1. Growth

      MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layer (pages 1411–1415)

      S. Kuboya, F. Nakajima, R. Katayama and K. Onabe

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565373

    2. N-plasma assisted MBE grown GaN films on Si(111) (pages 1416–1420)

      Subhashis Gangopadhyay, Thomas Schmidt and Jens Falta

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565439

    3. New semiconductor alloy GaNAsBi with temperature-insensitive bandgap (pages 1421–1425)

      Masahiro Yoshimoto, Wei Huang, Gan Feng and Kunishige Oe

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565270

    4. Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers (pages 1426–1430)

      T. Malinauskas, K. Jarašiūnas, R. Aleksiejunas, D. Gogova, B. Monemar, B. Beaumont and P. Gibart

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565139

    5. Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3 (pages 1431–1435)

      Y. Kumagai, K. Takemoto, J. Kikuchi, T. Hasegawa, H. Murakami and A. Koukitu

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565208

    6. Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing (pages 1436–1440)

      F. Tuomisto, S. Hautakangas, I. Makkonen, V. Ranki, M. J. Puska, K. Saarinen, M. Bockowski, T. Suski, T. Paskova, B. Monemar, X. Xu and D. C. Look

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565109

    7. Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire (pages 1441–1445)

      Sandip Ghosh, Pranob Misra, Holger T. Grahn, Bilge Imer, Shuji Nakamura, Steven P. DenBaars and James S. Speck

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565297

    8. N-polarity GaN on sapphire substrate grown by MOVPE (pages 1446–1450)

      Takashi Matsuoka, Yasuyuki Kobayashi, Hiroko Takahata, Toshitugu Mitate, Seiichiro Mizuno, Atsushi Sasaki, Mamoru Yoshimoto, Tuyoshi Ohnishi and Masatomo Sumiya

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565456

    9. RF-MBE growth and structural characterization of cubic InN films on GaAs (pages 1451–1455)

      T. Nakamura, K. Iida, R. Katayama, T. Yamamoto and K. Onabe

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565376

    10. Temperature-dependent growth and characterization of N-polar InN films by molecular beam epitaxy (pages 1456–1460)

      Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani and Akihiko Yoshikawa

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565145

    11. Unintentionally doped InN grown onto an atomically flat AlN intermediate layer using plasma-assisted molecular beam epitaxy (pages 1461–1467)

      K. R. Wang, L. W. Tu, S. J. Lin, Y. L. Chen, Z. W. Jiang, M. Chen, C. L. Hsiao, K. H. Cheng, J. W. Yeh and S. K. Chen

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565449

    12. A-plane (11equation image0) InN growth on nitridated R-plane (10equation image2) sapphire by ECR-MBE (pages 1468–1471)

      Y. Kumagai, A. Tsuyuguchi, H. Naoi, T. Araki, H. Na and Y. Nanishi

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565383

    13. Undoped and rare-earth doped GaN quantum dots on AlGaN (pages 1472–1475)

      Yuji Hori, Thomas Andreev, Thomas Florian, Edith Bellet-Amalric, Daniel Le Si Dang, Mitsuhiro Tanaka, Osamu Oda and Bruno Daudin

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565190

    14. Growth of AlN nanowires by metal organic chemical vapour deposition (pages 1476–1480)

      V. Cimalla, Ch. Foerster, D. Cengher, K. Tonisch and O. Ambacher

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565205

    15. Low density GaN quantum dots on AlGaN (pages 1486–1489)

      K. Pakuła, R. Bożek, K. Surowiecka, R. Stępniewski, A. Wysmolek and J. M. Baranowski

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565231

    16. Epitaxial growth and characterization of InN nanorods and compact layers on silicon substrates (pages 1490–1493)

      M. A. Sánchez-García, J. Grandal, E. Calleja, S. Lazic, J. M. Calleja and A. Trampert

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565311

    17. Resonant Raman scattering in InGaN alloys (pages 1494–1498)

      V. Yu. Davydov, A. A. Klochikhin, I. N. Goncharuk, A. N. Smirnov, A. V. Sakharov, A. P. Skvortsov, M. A. Yagovkina, V. M. Lebedev, Hai Lu and William J. Schaff

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565350

    18. Structural and electrical properties

      Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown on a-plane 6H-SiC (pages 1499–1507)

      A. Cros, J. A. Budagosky, A. García-Cristóbal, N. Garro, A. Cantarero, S. Founta, H. Mariette and B. Daudin

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565103

    19. Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction (pages 1508–1513)

      R. I. Barabash, G. E. Ice, W. Liu, C. Roder, S. Figge, S. Einfeldt, D. Hommel, T. M. Katona, J. S. Speck, S. P. DenBaars and R. F. Davis

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565442

    20. Study of InAsN quantum dots on GaAs substrates by molecular beam epitaxy (pages 1514–1518)

      A. Ueta, K. Akahane, S. Gozu, N. Yamamoto and N. Ohtani

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565172

    21. In situ and ex situ grazing incidence diffraction anomalous fine structure study of GaN/AlN quantum dots (pages 1519–1523)

      J. Coraux, H. Renevier, M. G. Proietti, V. Favre-Nicolin, B. Daudin and G. Renaud

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565247

    22. X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN (pages 1524–1528)

      Michinobu Tsuda, Hiroko Furukawa, Akira Honshio, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565344

    23. Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3 substrates (pages 1529–1532)

      B. A. Danilchenko, S. E. Zelensky, E. Drok, S. A. Vitusevich, S. V. Danylyuk, N. Klein, H. Lüth, A. E. Belyaev and V. A. Kochelap

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565445

    24. Relaxation in crack-free AlN/GaN superlattices (pages 1533–1536)

      R. Kröger, C. Kruse, C. Roder, D. Hommel and A. Rosenauer

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565470

    25. Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments (pages 1537–1540)

      L. H. Dmowski, K. Dybko, J. Plesiewicz, T. Suski, H. Lu, W. Schaff, M. Kurouchi, Y. Nanishi, L. Konczewicz, V. Cimalla and O. Ambacher

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565293

    26. Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN (pages 1541–1544)

      T. Wójtowicz, F. Gloux, P. Ruterana, G. Nouet, L. Bodiou, A. Braud, K. Lorenz and E. Alves

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565256

    27. Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction (pages 1545–1550)

      M. Drakopoulos, M. Laügt, T. Riemann, B. Beaumont and P. Gibart

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565294

    28. Optical properties

      Electric fields in AlGaN/GaN quantum well structures (pages 1551–1559)

      C. McAleese, P. M. F. J. Costa, D. M. Graham, H. Xiu, J. S. Barnard, M. J. Kappers, P. Dawson, M. J. Godfrey and C. J. Humphreys

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565382

    29. Degenerate four-wave mixing spectroscopy of GaN films on various substrates (pages 1560–1563)

      T. Ishiguro, Y. Toda, S. Adachi, T. Mukai, K. Hoshino and Y. Arakawa

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565167

    30. Transient pump–probe measurements for polarized excitons in strained GaN epitaxial layers (pages 1564–1567)

      T. Ishiguro, Y. Toda, S. Adachi, M. Arita and Y. Arakawa

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565234

    31. Four-wave mixing measurements of biexcitons in uniaxially-strained GaN films (pages 1568–1571)

      Satoru Adachi, Yasunori Toda and Tetsuro Ishiguro

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565298

    32. Transition energies and Stokes shift analysis for In-rich InGaN alloys (pages 1572–1576)

      P. Schley, R. Goldhahn, A. T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu and W. J. Schaff

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565303

    33. Meta-GGA calculation of the electronic structure of group III–V nitrides (pages 1577–1582)

      F. Litimein, B. Bouhafs, G. Nouet and P. Ruterana

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565338

    34. Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxy (pages 1588–1593)

      J. Arvanitidis, M. Katsikini, S. Ves, A. Delimitis, Th. Kehagias, Ph. Komninou, E. Dimakis, E. Iliopoulos and A. Georgakilas

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565193

    35. Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN (pages 1594–1598)

      V. Darakchieva, T. Paskova, P. P. Paskov, H. Arwin, M. Schubert, B. Monemar, S. Figge, D. Hommel, B. A. Haskell, P. T. Fini and S. Nakamura

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565400

    36. Pressure and composition dependence of the electron effective mass in GaAs1–xNx (pages 1599–1603)

      I. Gorczyca, N. E. Christensen and A. Svane

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565315

    37. The dominant shallow 0.225 eV acceptor in GaN (pages 1604–1608)

      B. Monemar, P. P. Paskov, J. P. Bergman, T. Paskova, S. Figge, J. Dennemarck and D. Hommel

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565425

    38. Investigating the electrical properties of Si donors in AlxGa1–xN alloys (pages 1609–1613)

      G. R. James, F. Omnès and A. W. R. Leitch

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565461

    39. Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates (pages 1614–1618)

      A. Žukauskas, K. Kazlauskas, G. Tamulaitis, P. Pobedinskas, S. Juršėnas, S. Miasojedovas, V. Yu. Ivanov, M. Godlewski, C. Skierbiszewski, M. Siekacz, G. Franssen, P. Perlin, T. Suski and I. Grzegory

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565228

    40. Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells (pages 1630–1633)

      M. Tchernycheva, L. Nevou, L. Doyennette, F. H. Julien, F. Guillot, E. Monroy, T. Remmele and M. Albrecht

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565116

    41. Raman study of N bonding in AlGaAs/InGaAsN multiquantum wells (pages 1634–1638)

      S. Lazić, J. M. Calleja, R. Hey and K. Ploog

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565192

    42. Strong light–matter coupling in GaN microcavities grown on silicon(111) at room temperature (pages 1639–1642)

      I. R. Sellers, F. Semond, M. Leroux, J. Massies, A-L. Henneghien, P. Disseix, J. Leymarie and A. Vasson

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565269

    43. Fast spin relaxation in InGaN/GaN multiple quantum wells (pages 1643–1646)

      J. Brown, J.-P. R. Wells, S. A. Hashemizadeh, P. J. Parbrook, T. Wang, A. M. Fox, D. J. Mowbray and M. S. Skolnick

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565271

    44. Optical properties of single non-polar GaN quantum dots (pages 1652–1656)

      F. Rol, B. Gayral, S. Founta, B. Daudin, J. Eymery, J.-M. Gérard, H. Mariette, Le Si Dang and D. Peyrade

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565406

    45. Growth and optical characterization of InAsN quantum dots (pages 1657–1660)

      H. Tsurusawa, A. Nishikawa, R. Katayama and K. Onabe

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565395

    46. Micro-photoluminescence studies of InGaN/GaN quantum dots up to 150 K (pages 1661–1664)

      K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi and D. Hommel

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565407

    47. The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE (pages 1665–1668)

      Tetsuo Narita, Yoshio Honda, Masahito Yamaguchi and Nobuhiko Sawaki

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565115

    48. GaN/AlGaN superlattices for optoelectronics in the mid-infrared (pages 1669–1673)

      F. Guillot, E. Monroy, B. Gayral, E. Bellet-Amalric, D. Jalabert, J.-M. Gérard, Le Si Dang, M. Tchernycheva, F. H. Julien, S. Monnoye and H. Mank

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565328

    49. Resonant Raman characterization of InAlGaN/GaN heterostructures (pages 1674–1678)

      A. Cros, A. Cantarero, N. T. Pelekanos, A. Georgakilas, J. Pomeroy and M. Kuball

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565132

    50. Magnetic properties

      Superconductivity of InN with a well defined Fermi surface (pages 1679–1686)

      T. Inushima, N. Kato, D. K. Maude, Hai Lu, W. J. Schaff, R. Tauk, Y. Meziani, S. Ruffenack, O. Briot, W. Knap, B. Gil, H. Miwa, A. Yamamoto, D. Muto, Y. Nanishi, M. Higashiwaki and T. Matsui

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565419

    51. Site selectivity of Fe3+Ga and the formation of Fe3+Ga–Gai pairs in GaN (pages 1687–1691)

      W. Gehlhoff, D. Azamat and A. Hoffmann

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565466

    52. X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors (pages 1692–1695)

      O. Sancho-Juan, A. Cantarero, G. Martínez-Criado, D. Olguín, N. Garro, A. Cros, M. Salomé, J. Susini, S. Dhar and K. Ploog

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565413

    53. Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors (pages 1696–1700)

      J. I. Hwang, Y. Ishida, M. Kobayashi, Y. Osafune, T. Mizokawa, A. Fujimori, Y. Takeda, K. Terai, S-I. Fujimori, Y. Saitoh, Y. Muramatsu, A. Tanaka, T. Kondo, H. Munekata, M. Hashimoto, H. Tanaka, S. Hasegawa and H. Asahi

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565329

    54. Doping of GaN with Fe and Mg for spintronics applications (pages 1701–1705)

      Alberta Bonanni, Clemens Simbrunner, Matthias Wegscheider, Hanka Przybylinska, Agnieszka Wolos, Helmut Sitter and Wolfgang Jantsch

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565230

    55. Electronic devices

      Quantum transport in high mobility AlGaN/GaN 2DEGs and nanostructures (pages 1706–1712)

      S. Schmult, M. J. Manfra, A. M. Sergent, A. Punnoose, H. T. Chou, D. Goldhaber-Gordon and R. J. Molnar

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565378

    56. The performance of AlGaN solar blind UV photodetectors: responsivity and decay time (pages 1713–1717)

      G. Cherkashinin, V. Lebedev, R. Wagner, I. Cimalla and O. Ambacher

      Version of Record online: 6 JUN 2006 | DOI: 10.1002/pssb.200565213

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