physica status solidi (b)

Cover image for Vol. 246 Issue 8

August 2009

Volume 246, Issue 8

Pages 1733–1963

Issue edited by: Alexander V. Kolobov

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
    1. Front Cover (Phys. Status Solidi B 8/2009)

      Version of Record online: 27 JUL 2009 | DOI: 10.1002/pssb.200990009

      Thumbnail image of graphical abstract

      In the paper by Giuseppe Pezzotti and co-workers (pp. 1893–1900), the angular dependence of the Raman intensity of Eg and A1g modes was investigated and the Raman tensor elements were defined for sapphire single crystals. The quantitative knowledge of these tensor elements allows the determination of unknown crystallographic textures in polycrystalline alumina. This work represents the first step toward a fully quantitative stress analysis of alumina polycrystals on the microscopic scale using their Raman emission. The cover picture shows the trend recorded for the angular dependence of the Eg Raman intensity (in parallel configuration) on different planes of the corundum structure of sapphire. The image of the surface of a polycrystalline alumina sample shows the approach through which the authors could get the orientation of the individual grain orientation.

  2. Inside Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
    1. Inside Back Cover (Phys. Status Solidi B 8/2009)

      Version of Record online: 27 JUL 2009 | DOI: 10.1002/pssb.200990010

      Thumbnail image of graphical abstract

      The Editor's Choice article by Friedhelm Bechstedt et al. reviews recent progress in the determination of electronic states of semiconductors as well as insulators without taking into account experimental parameters. Based on the quasiparticle picture of electronic excitations, this work's central idea is the treatment of the exchange–correlation energy within Hedin's GW approximation. For more information see pp. 1877–1892.

  3. Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
    1. Back Cover (Phys. Status Solidi B 8/2009)

      Version of Record online: 27 JUL 2009 | DOI: 10.1002/pssb.200990011

      Thumbnail image of graphical abstract

      In the 1950s, when most semiconductor scientists concentrated their efforts on silicon and germanium and when binary semiconductors were still at the laboratory stage, Boris Timofeevich Kolomiets (1908–1989) found ternary semiconductors far more challenging. Pursuing his efforts to investigate amorphous semiconductors at the Ioffe institute – its main building is shown on the back cover – he can be considered the founding father of this research field. This issue which is guest-edited by Alexander V. Kolobov, AIST, Japan, contains papers written by scientists who have made significant contributions to the science and technology of amorphous semiconductors. The articles are dedicated in memoriam to Professor Kolomiets in recognition of his scientific achievements and for his accomplishments as a former board member of this journal.

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
  5. New Editors

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
  6. Preface

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
    1. Amorphous semiconductors and phase-change materials

      Preface (pages 1739–1740)

      Alexander V. Kolobov

      Version of Record online: 27 JUL 2009 | DOI: 10.1002/pssb.200982022

  7. Past and Present

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
    1. Amorphous semiconductors and phase-change materials

  8. Original Paper

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
    1. Amorphous semiconductors and phase-change materials

  9. Feature Article

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
    1. Amorphous semiconductors and phase-change materials

  10. Past and Present

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
    1. Amorphous semiconductors and phase-change materials

  11. Feature Article

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
    1. Amorphous semiconductors and phase-change materials

      Amorphous selenium and its alloys from early xeroradiography to high resolution X-ray image detectors and ultrasensitive imaging tubes (pages 1794–1805)

      Safa Kasap, Joel B. Frey, George Belev, Olivier Tousignant, Habib Mani, Luc Laperriere, Alla Reznik and John A. Rowlands

      Version of Record online: 6 JUL 2009 | DOI: 10.1002/pssb.200982007

  12. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
    1. Amorphous semiconductors and phase-change materials

    2. Photocurrent measurements in chlorine-doped amorphous selenium (pages 1841–1844)

      Mohammed L. Benkhedir, Mohammed Mansour, Fahima Djefaflia, Monica Brinza and Guy J. Adriaenssens

      Version of Record online: 6 JUL 2009 | DOI: 10.1002/pssb.200982014

    3. Low-temperature amorphous silicon p–i–n photodiodes (pages 1854–1857)

      Robert A. Street, William S. Wong and Rene Lujan

      Version of Record online: 6 JUL 2009 | DOI: 10.1002/pssb.200982017

    4. Effect of alloy disorder on photoluminescence in HgCdTe (pages 1858–1861)

      V. I. Ivanov-Omskii, N. L. Bazhenov and K. D. Mynbaev

      Version of Record online: 6 JUL 2009 | DOI: 10.1002/pssb.200982018

    5. Photoinduced effects in As[BOND]S[BOND]P glasses (pages 1866–1870)

      Silvia Helena Santagneli, Sandra Helena Messaddeq, Sidney José Lima Ribeiro and Younès Messaddeq

      Version of Record online: 16 JUL 2009 | DOI: 10.1002/pssb.200982020

    6. On the atomic structure of thin amorphous Ge–Sb–Te films (pages 1871–1874)

      Miloslav Frumar, Tomas Kohoutek, Jan Prikryl, Jiri Orava and Tomas Wagner

      Version of Record online: 27 JUL 2009 | DOI: 10.1002/pssb.200982021

  13. Editor's Choice

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
    1. You have free access to this content
  14. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors
    1. Optical properties

    2. Magnetic properties; magnetic resonances

      Structural transformations and magnetic properties of Bi1–xLnx FeO3 (Ln = La, Nd, Eu) multiferroics (pages 1901–1907)

      I. O. Troyanchuk, M. V. Bushinsky, D. V. Karpinsky, O. S. Mantytskaya, V. V. Fedotova and O. I. Prochnenko

      Version of Record online: 22 APR 2009 | DOI: 10.1002/pssb.200945030

    3. Spin-coupling and hyperfine interaction of the nitrogen donors in 6H-SiC (pages 1908–1914)

      Dariya V. Savchenko, Ekaterina N. Kalabukhova, Vitalii S. Kiselev, Joachim Hoentsch and Andreas Pöppl

      Version of Record online: 4 MAY 2009 | DOI: 10.1002/pssb.200945082

    4. Magnetic plasmon-polaritons in negative-index metallic antiferromagnets (pages 1939–1944)

      Roland H. Tarkhanyan and Dimitris G. Niarchos

      Version of Record online: 2 JUN 2009 | DOI: 10.1002/pssb.200945071

    5. Flexomagnetoelectric effect in bismuth ferrite (pages 1956–1960)

      Anatoly K. Zvezdin and Alexander P. Pyatakov

      Version of Record online: 12 JUN 2009 | DOI: 10.1002/pssb.200945214

  15. Information for authors

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. New Editors
    7. Preface
    8. Past and Present
    9. Original Paper
    10. Feature Article
    11. Past and Present
    12. Feature Article
    13. Original Papers
    14. Editor's Choice
    15. Original Papers
    16. Information for authors

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