Front Cover (Phys. Status Solidi B 11-12/2010)
Shunjiro Fujii, Takeshi Tanaka, Hiroshi Suga, Yasuhisa Naitoh, Takeo Minari, Kazuhito Tsukagoshi and Hiromichi Kataura
Article first published online: 26 NOV 2010 | DOI: 10.1002/pssb.201090023
The back-cover image points to a promising method of patterning single-wall carbon nanotube (SWCNT) thin films for the fabrication of thin film transistors (TFTs) using hydrophilic and hydrophobic self-assembled mono layers (SAMs). Hiromichi Kataura and co-workers (pp. 2750–2753) demonstrate the site-selective deposition of uniform SWCNT thin films on a SiO2/Si substrate using SAMs: nonpolar octadecyltrichlorosilane SAM is patterned by ultraviolet light through a shadow mask, then polar 3-aminopropyltriethoxysilane SAM is selectively formed at the channel area of TFTs, and finally, semiconductor enriched SWCNT thin films are selectively deposited on the TFT channel using these patterned SAMs. The obtained TFTs showed high on/off current ratios over 104 without any post treatment. It was confirmed that this method is useful to produce a large number of TFTs at the same time.