Substrate dependent buffer-layer assisted growth of nanoclusters (pages 1063–1068)
Jan Honolka, Violetta Sessi, Jian Zhang, Simon Hertenberger, Axel Enders and Klaus Kern
Version of Record online: 17 FEB 2010 | DOI: 10.1002/pssb.200945510
The authors show limits and potentials of the Xenon buffer layer assisted growth (BLAG) technique for the fabrication of metallic nanoclusters on different surfaces. The STM studies show that the cluster positioning and morphology strongly depend on the choice of the surface and thus contradict the idea that with the help of a sacrificial Xenon layer, clusters of the same kind can be grown on any surface. The different final cluster arrangements on the surfaces can be understood in terms of simple surface free energy arguments. On Ag surfaces, round 3D clusters are formed, while on Rh surfaces the clusters are 2D with a ramified shape. The cluster mobility is also found to be dependent on the surface free energy. In a last step it is shown that molecular layers can be used to suppress the cluster mobility during BLAG leading to smaller cluster sizes and random distribution of clusters on the surface.