Inside Back Cover (Phys. Status Solidi B 6/2010)
Claus Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider and H. Kalt
Version of Record online: 26 MAY 2010 | DOI: 10.1002/pssb.201090010
Zinc oxide (ZnO) research has a long and successful history and is experiencing a remarkable revival during the last decade. ZnO is a technologically important semiconductor with a wide band-gap of about 3.4 eV and with a direct, dipole-allowed band-to-band transition. In their Review Article on p. 1424 Claus Klingshirn and his coauthors discuss new and established research focusing on optical properties but also including related topics like transport and magnetic properties. The discussion starts with bulk samples, proceeds then to epitaxial layers and nanorods which, in many respects, are similar to bulk samples, and concludes with information on low dimensional structures. The question if ZnO will see a major breakthrough in photonics and electronics depends strongly on the availability of stable and reproducible p-type material and the fabrication of efficient LEDs and laser diodes.