physica status solidi (b)

Cover image for Vol. 247 Issue 7

July 2010

Volume 247, Issue 7

Pages 1573–1831

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Feature Article
    9. Preface
    10. Original Papers
    11. Information for authors
    1. Front Cover (Phys. Status Solidi B 7/2010)

      Baruch Feldman, Seongjun Park, Michael Haverty, Sadasivan Shankar and Scott T. Dunham

      Version of Record online: 24 JUN 2010 | DOI: 10.1002/pssb.201090012

      Thumbnail image of graphical abstract

      Nanoscale copper wires are necessary to interconnect transistors and form logical circuits in microprocessors. Conductivity degradation in nanoscale metals leads to significant power wasted in the interconnect, but the mechanisms of this degradation remain poorly understood theoretically. Baruch Feldman et al. (pp.1791-1796) perform first-principles simulations of the electron scattering in copper and silver grain boundaries, one of the primary causes of conductivity degradation, and investigate the detailed determinants of scattering. The front cover image referring to this article shows multi-crystalline copper interconnect lines.

  2. Inside Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Feature Article
    9. Preface
    10. Original Papers
    11. Information for authors
    1. Inside Back Cover (Phys. Status Solidi B 7/2010)

      Lee Chow, Oleg Lupan and Guangyu Chai

      Version of Record online: 24 JUN 2010 | DOI: 10.1002/pssb.201090013

      Thumbnail image of graphical abstract

      ZnO is an excellent material for many applications such as UV emitters, gas sensors, transparent conductors, piezoelectric transducers, etc. The focused ion beam (FIB) technique, on the other hand, is an excellent fabrication tool for nanodevices. In this issue's Inside Back Cover article (pp. 1628–1632), Lee Chow, Oleg Lupan, and Guangyu Chai report on the development of an innovative technique using FIB to fabricate ZnO tetrapods and ZnO micro-cross gas sensors and UV sensors. It is shown that ZnO tetrapod sensors can be used to detect minute amounts of hydrogen and other gases.

  3. Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Feature Article
    9. Preface
    10. Original Papers
    11. Information for authors
    1. Back Cover (Phys. Status Solidi B 7/2010)

      M. Peres, M. J. Soares, A. J. Neves, T. Monteiro, V. E. Sandana, F. Teherani and D. J. Rogers

      Version of Record online: 24 JUN 2010 | DOI: 10.1002/pssb.201090014

      Thumbnail image of graphical abstract

      M. Peres et al. (pp. 1695–1698) characterize the morphological and optical properties of ZnO nanostructures grown by pulsed laser deposition (PLD) on c-sapphire and Si(111), assessing them by SEM, PL and reflection measurements. The SEM images show two main kinds of morphology: high-density nanocolumn and nanocone arrays with preferential orientation perpendicular to the substrate plane. In order to analyse the antireflective properties of the PLD-grown nanostructures, room-temperature wavelength and angle dependent reflectance measurements were performed. The results suggest that these nanostructures act as highly effective broad-band antireflection coatings.

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Feature Article
    9. Preface
    10. Original Papers
    11. Information for authors
  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Feature Article
    9. Preface
    10. Original Papers
    11. Information for authors
  6. Review Article

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Feature Article
    9. Preface
    10. Original Papers
    11. Information for authors
  7. Feature Article

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Feature Article
    9. Preface
    10. Original Papers
    11. Information for authors
    1. Ab initio study of magnetoelectricity in composite multiferroics (pages 1600–1607)

      M. Fechner, I. V. Maznichenko, S. Ostanin, A. Ernst, J. Henk and I. Mertig

      Version of Record online: 26 MAR 2010 | DOI: 10.1002/pssb.200945417

  8. Preface

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Feature Article
    9. Preface
    10. Original Papers
    11. Information for authors
    1. Wide band gap II–VI and III–V semiconductors

      Preface (pages 1609–1610)

      M. Godlewski and A. J. Zakrzewski

      Version of Record online: 24 JUN 2010 | DOI: 10.1002/pssb.200983700

  9. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Feature Article
    9. Preface
    10. Original Papers
    11. Information for authors
    1. Wide band gap II–VI and III–V semiconductors

      Zinc oxide grown by atomic layer deposition – a material for novel 3D electronics (pages 1611–1615)

      Elżbieta Guziewicz, Marek Godlewski, Tomasz A. Krajewski, Łukasz Wachnicki, Grzegorz Łuka, Jarosław Z. Domagała, Wojciech Paszkowicz, Bogdan J. Kowalski, Bartłomiej S. Witkowski, Anna Dużyńska and Andrzej Suchocki

      Version of Record online: 5 MAY 2010 | DOI: 10.1002/pssb.200983699

    2. Intersubband optics in GaN-based nanostructures – physics and applications (pages 1622–1627)

      M. Tchernycheva, L. Nevou, L. Vivien, F. H. Julien, P. K. Kandaswamy, E. Monroy, A. Vardi and G. Bahir

      Version of Record online: 7 MAY 2010 | DOI: 10.1002/pssb.200983694

    3. FIB fabrication of ZnO nanotetrapod and cross-sensor (pages 1628–1632)

      Lee Chow, Oleg Lupan and Guangyu Chai

      Version of Record online: 7 MAY 2010 | DOI: 10.1002/pssb.200983695

    4. ZnO nanostructures for photovoltaic cells (pages 1633–1636)

      Belete A. Gonfa, A. F. da Cunha and Ana B. Timmons

      Version of Record online: 23 APR 2010 | DOI: 10.1002/pssb.200983684

    5. Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE (pages 1637–1640)

      Th. Kehagias, L. Lahourcade, A. Lotsari, E. Monroy, G. P. Dimitrakopulos and Ph. Komninou

      Version of Record online: 7 MAY 2010 | DOI: 10.1002/pssb.200983675

    6. Electronic and magnetic properties of Co-doped ZnO: First principles study (pages 1641–1644)

      H. Rozale, A. Lakdja, A. Lazreg and P. Ruterana

      Version of Record online: 3 MAY 2010 | DOI: 10.1002/pssb.200983682

    7. Acceptor behavior of N2O in MOCVD-grown ZnO thin-film transistors (pages 1645–1648)

      Ogweon Seo, Haemi Kim, Junho Yun and Jungyol Jo

      Version of Record online: 3 MAY 2010 | DOI: 10.1002/pssb.200983683

    8. Study of the flat band voltage shift of metal/insulator/n-GaN capacitors by annealing (pages 1649–1652)

      Junjiroh Kikawa, Masamitsu Kaneko, Hirotaka Otake, Tatsuya Fujishima, Kentaro Chikamatsu, Atsushi Yamaguchi and Yasushi Nanishi

      Version of Record online: 23 APR 2010 | DOI: 10.1002/pssb.200983671

    9. Electrical and optical properties of zinc oxide layers grown by the low-temperature atomic layer deposition technique (pages 1653–1657)

      Tomasz A. Krajewski, Krzysztof Dybko, Grzegorz Luka, Lukasz Wachnicki, Bartlomiej S. Witkowski, Anna Duzynska, Krzysztof Kopalko, Elzbieta Lusakowska, Bogdan J. Kowalski, Marek Godlewski and Elzbieta Guziewicz

      Version of Record online: 3 MAY 2010 | DOI: 10.1002/pssb.200983678

    10. Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy (pages 1658–1661)

      Pierre Lorenz, Thomas Haensel, Richard Gutt, Roland J. Koch, Juergen A. Schaefer and Stefan Krischok

      Version of Record online: 3 MAY 2010 | DOI: 10.1002/pssb.200983691

    11. High temperature defect equilibrium in ZnS:Cu single crystals (pages 1662–1665)

      K. Lott, S. Shinkarenko, L. Türn, T. Nirk, A. Öpik, U. Kallavus, E. Gorokhova, A. Grebennik and A. Vishnjakov

      Version of Record online: 23 APR 2010 | DOI: 10.1002/pssb.200983673

    12. Effects related to deposition temperature of ZnCoO films grown by atomic layer deposition – uniformity of Co distribution, structural, optical, electrical and magnetic properties (pages 1666–1670)

      Małgorzata I. Łukasiewicz, Bartłomiej Witkowski, Marek Godlewski, Elżbieta Guziewicz, Maciej Sawicki, Wojciech Paszkowicz, Rafał Jakieła, Tomasz A. Krajewski and Grzegorz Łuka

      Version of Record online: 7 MAY 2010 | DOI: 10.1002/pssb.200983689

    13. Optical characterization of nitrogen- and antimony-doped ZnO thin layers grown by MOVPE (pages 1671–1674)

      Nadia Hanèche, Alain Lusson, Corinne Sartel, Ali Marzouki, Vincent Sallet, Meherzi Oueslati, François Jomard and Pierre Galtier

      Version of Record online: 8 JUN 2010 | DOI: 10.1002/pssb.200983679

    14. Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots (pages 1675–1678)

      M. Peres, A. J. Neves, T. Monteiro, S. Magalhães, E. Alves, K. Lorenz, H. Okuno-Vila, V. Fellmann, C. Bougerol and B. Daudin

      Version of Record online: 7 MAY 2010 | DOI: 10.1002/pssb.200983674

    15. Valence-band splitting and optical anisotropy of AlN (pages 1679–1682)

      G. Rossbach, M. Röppischer, P. Schley, G. Gobsch, C. Werner, C. Cobet, N. Esser, A. Dadgar, M. Wieneke, A. Krost and R. Goldhahn

      Version of Record online: 3 MAY 2010 | DOI: 10.1002/pssb.200983677

    16. Structural characterization of one-dimensional ZnO-based nanostructures grown by MOCVD (pages 1683–1686)

      Vincent Sallet, Said Agouram, Farid Falyouni, Ali Marzouki, Nadia Haneche, Corinne Sartel, Alain Lusson, Shaïma Enouz-Vedrenne, Vicente Munoz-Sanjose and Pierre Galtier

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssb.200983676

    17. Surface morphology and photoluminescence studies of Sb-doped ZnO layers grown using MOCVD (pages 1687–1690)

      Corinne Sartel, Nadia Haneche, François Jomard, Alain Lusson, Christèle Vilar, Jean-Michel Laroche, Pierre Galtier and Vincent Sallet

      Version of Record online: 14 MAY 2010 | DOI: 10.1002/pssb.200983693

    18. Hybridization and magnetic anisotropy of S-state ions in wurtzite DMS (pages 1691–1694)

      Adrien Savoyant, Anne-Marie Daré, Roland Hayn, Roman Kuzian and Anatoli Stepanov

      Version of Record online: 3 MAY 2010 | DOI: 10.1002/pssb.200983680

    19. Morphological and optical studies of self-forming ZnO nanocolumn and nanocone arrays grown by PLD on various substrates (pages 1695–1698)

      M. Peres, M. J. Soares, A. J. Neves, T. Monteiro, V. E. Sandana, F. Teherani and D. J. Rogers

      Version of Record online: 3 MAY 2010 | DOI: 10.1002/pssb.200983685

    20. Comparison of dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by atomic layer deposition method (pages 1699–1701)

      L. Wachnicki, M. Lukasiewicz, B. Witkowski, T. Krajewski, G. Luka, K. Kopalko, R. Minikayev, E. Przezdziecka, J. Z. Domagala, M. Godlewski and E. Guziewicz

      Version of Record online: 3 MAY 2010 | DOI: 10.1002/pssb.200983687

    21. Bulk crystal growth

      Layer thickness dependent carrier recombination rate in HVPE GaN (pages 1703–1706)

      Kęstutis Jarašiūnas, Tadas Malinauskas, Saulius Nargelas, Vytautas Gudelis, Juozas V. Vaitkus, Vitali Soukhoveev and Alexander Usikov

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssb.200983532

    22. Defect engineering and structural characterization

      Microarea strain analysis in GaN-based laser diodes using high-resolution microbeam X-ray diffraction (pages 1707–1709)

      Toshiya Yokogawa, Ryo Kato, Shigeru Kimura and Osami Sakata

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssb.200983500

    23. Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes (pages 1710–1712)

      Richard Gutt, Lutz Kirste, Thorsten Passow, Michael Kunzer, Klaus Köhler and Joachim Wagner

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssb.200983526

    24. Devices

      A conductivity-based selective etching for next generation GaN devices (pages 1713–1716)

      Yu Zhang, Sang-Wan Ryu, Chris Yerino, Benjamin Leung, Qian Sun, Qinghai Song, Hui Cao and Jung Han

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssb.200983650

    25. Electrical, optical and magnetic properties

    26. Raman scattering characterization of p-type AlGaN layers (pages 1725–1727)

      Jung Gon Kim, Hiroaki Yamamoto, Yasuhito Kamei, Noriyuki Hasuike, Hiroshi Harima, Kenji Kisoda, Masaya Ishida, Katsuki Furukawa and Mototaka Taneya

      Version of Record online: 8 JUN 2010 | DOI: 10.1002/pssb.200983568

    27. Magnetic characterization of conductance electrons in GaN (pages 1728–1731)

      A. Scholle, S. Greulich-Weber, D. J. As, Ch. Mietze, N. T. Son, C. Hemmingsson, B. Monemar, E. Janzén, U. Gerstmann, S. Sanna, E. Rauls and W. G. Schmidt

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssb.200983582

    28. Electronic devices

      GaN smart power IC technology (pages 1732–1734)

      King-Yuen Wong, Wanjun Chen, Xiaosen Liu, Chunhua Zhou and Kevin J. Chen

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssb.200983453

    29. Polarization engineering in GaN power transistors (pages 1735–1739)

      Tetsuzo Ueda, Tomohiro Murata, Satoshi Nakazawa, Hidetoshi Ishida, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka and Daisuke Ueda

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssb.200983651

    30. Emerging materials

      Al1−xInxN/GaN bilayers: Structure, morphology, and optical properties (pages 1740–1746)

      K. Lorenz, S. Magalhães, N. Franco, N. P. Barradas, V. Darakchieva, E. Alves, S. Pereira, M. R. Correia, F. Munnik, R. W. Martin, K. P. O'Donnell and I. M. Watson

      Version of Record online: 8 JUN 2010 | DOI: 10.1002/pssb.200983656

    31. Epitaxial growth

      High quality InxGa1–xN thin films with x > 0.2 grown on silicon (pages 1747–1749)

      I. Gherasoiu, K. M. Yu, L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager and W. Walukiewicz

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssb.200983462

    32. Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substrates (pages 1750–1752)

      C. Mauder, K. R. Wang, B. Reuters, H. Behmenburg, L. Rahimzadeh Khoshroo, Q. Wan, A. Trampert, M. V. Rzheutskii, E. V. Lutsenko, G. P. Yablonskii, J. F. Woitok, M. Heuken, H. Kalisch and R. H. Jansen

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssb.200983521

    33. Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer (pages 1753–1756)

      Maik Häberlen, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers and Colin J. Humphreys

      Version of Record online: 8 JUN 2010 | DOI: 10.1002/pssb.200983537

    34. LEDs

      Enhancement in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate (pages 1757–1760)

      C. B. Soh, K. H. Dai, W. Liu, S. J. Chua, R. J. N. Tan, A. M. Yong and Jack Eng

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssb.200983560

    35. The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes (pages 1761–1763)

      K. B. Lee, P. J. Parbrook, T. Wang, J. Bai, F. Ranalli, R. J. Airey and G. Hill

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssb.200983617

    36. Nanostructures

    37. Materials preparation, manipulation, and structure

    38. Structural evolution of double perovskite Sr2MgWO6 under high pressure (pages 1773–1777)

      A. K. Mishra, H. K. Poswal, S. N. Acharya, A. K. Tyagi and S. M. Sharma

      Version of Record online: 23 APR 2010 | DOI: 10.1002/pssb.201046030

    39. Electronic states

    40. Charge transport phenomena; superconductivity

    41. Simulation of grain boundary effects on electronic transport in metals, and detailed causes of scattering (pages 1791–1796)

      Baruch Feldman, Seongjun Park, Michael Haverty, Sadasivan Shankar and Scott T. Dunham

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssb.201046133

    42. Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions (pages 1797–1801)

      A. N. Useinov, R. G. Deminov, N. Kh. Useinov and L. R. Tagirov

      Version of Record online: 3 MAY 2010 | DOI: 10.1002/pssb.200945565

    43. Optical properties

      Clebsch–Gordan coefficients for scattering tensors in ZnO and other wurtzite semiconductors (pages 1802–1806)

      Herbert W. Kunert, Markus R. Wagner, Augusto G. J. Machatine, Prime Niyongabo, Johan B. Malherbe, Axel Hoffmann, Jozef Barnaś and Wojciech Florek

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssb.200945583

    44. Spectra and energy levels of Eu3+ in cubic phase Gd2O3 (pages 1807–1813)

      Eric R. Smith, John B. Gruber, Patrick Wellenius, John F. Muth and Henry O. Everitt

      Version of Record online: 14 MAY 2010 | DOI: 10.1002/pssb.200945602

    45. Ab initio calculations of optical spectra of a chiral (4,1) carbon nanotube (pages 1814–1821)

      T. Movlarooy, S. M. Hosseini, A. Kompany and N. Shahtahmasebi

      Version of Record online: 22 MAR 2010 | DOI: 10.1002/pssb.200945416

    46. Magnetic properties; magnetic resonances

  10. Information for authors

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Feature Article
    9. Preface
    10. Original Papers
    11. Information for authors
    1. Information for authors (pages 1830–1831)

      Version of Record online: 24 JUN 2010 | DOI: 10.1002/pssb.201040721

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