physica status solidi (b)

Cover image for Vol. 248 Issue 3

March 2011

Volume 248, Issue 3

Pages 505–759

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Front Cover: Charge transport in organic crystals: Theory and modelling (Phys. Status Solidi B 3/2011)

      Frank Ortmann, Friedhelm Bechstedt and Karsten Hannewald

      Article first published online: 21 FEB 2011 | DOI: 10.1002/pssb.201190006

      Thumbnail image of graphical abstract

      Efficient charge transport in organic semiconductors is the key for their application in organic electronics. Therefore the most important design ansatz is directed to improve carrier mobilities by means of available tools such as chemical and/or structural modifications of the organic materials. Thereby theoretical input can provide guidelines towards possible realizations of high-mobility or, more general, highly functional materials. The Feature Article by Ortmann et al. (pp. 511–525) provides a systematic review of several charge transport approaches and their capabilities regarding this goal. Special focus is put on the transport mechanism, the mobility anisotropy, and temperature dependence of charge carrier transport. As the central concept the inclusion of the strong coupling of carriers with the vibrating lattice and, hence, the dressing of carriers to polarons is described.

  2. Inside Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Inside Back Cover: Electronic structure of antimony selenide (Sb2Se3) from GW calculations (Phys. Status Solidi B 3/2011)

      Rajasekarakumar Vadapoo, Sridevi Krishnan, Hulusi Yilmaz and Carlos Marin

      Article first published online: 21 FEB 2011 | DOI: 10.1002/pssb.201190007

      Thumbnail image of graphical abstract

      The article by R. Vadapoo and coworkers (pp. 700–705) reports the electronic structure of the Sb2Se3 crystal using first-principles calculations. The material is receiving increasing attention due to its ability to get synthesized in different types of nanostructures and to form nanosize heterostructures with other similar lattices. The authors find that the density of states is packed with van Hove singularities typical of confinements in one dimension. The results are not surprising considering the Sb2Se3 structure that can be described as an array of weakly bonded 1D nanoribbons. The calculations detailed in this article will certainly be of much help to many researchers looking for designs of engineered nanostructures based on lattices of the Sb2Se3 type.

  3. Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Back Cover: Polarization switching of the optical gain in semipolar InGaN quantum wells (Phys. Status Solidi B 3/2011)

      W. G. Scheibenzuber and U. T. Schwarz

      Article first published online: 21 FEB 2011 | DOI: 10.1002/pssb.201190008

      Thumbnail image of graphical abstract

      Scheibenzuber and Schwarz (pp. 647–651) investigate the influence of polarization switching on the optical gain of semipolar InGaN quantum wells (QWs) depending on indium content and charge carrier oncentration using self-consistent 6 × 6 k·p band structure calculations. The cover illustration shows a 3D-plot of the topmost four valence bands in a (11–22) oriented, 3 nm thick InGaN QW with 35% indium. The band energy is plotted as a function of the hole wavevector in the QW plane (components kx′ and ky′). To the bottom left, there is a drawing of unit cell of the wurtzite GaN crystal, where the (11–22) plane is marked as a shaded blue rectangle, the orientation of which corresponds to the orientation of the main figure. The nuclear orbital drawings on the main figure illustrate the hole wavefunctions ( Px′ or Py′) of the corresponding valence band.

  4. Issue Information

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Issue Information

      Article first published online: 21 FEB 2011 | DOI: 10.1002/pssb.201190009

  5. Contents

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Content (Phys. Status Solidi B 3/2011) (pages 505–509)

      Article first published online: 21 FEB 2011 | DOI: 10.1002/pssb.201140811

  6. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Recent and forthcoming publications in pss (page 510)

      Article first published online: 21 FEB 2011 | DOI: 10.1002/pssb.201140812

  7. Feature Articles

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Advanced Calculations for Defects in Solids - Electronic Structure Methods

      Accelerating GW calculations with optimal polarizability basis (pages 527–536)

      P. Umari, X. Qian, N. Marzari, G. Stenuit, L. Giacomazzi and S. Baroni

      Article first published online: 1 DEC 2010 | DOI: 10.1002/pssb.201046264

  8. Preface

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Polarization-Field Control in Nitride Light Emitters (pages 547–548)

      Ferdinand Scholz and Ulrich Schwarz

      Article first published online: 21 FEB 2011 | DOI: 10.1002/pssb.201140813

  9. Feature Articles

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Polarization-Field Control in Nitride Light Emitters

      Three-dimensional GaN for semipolar light emitters (pages 549–560)

      T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter and F. Scholz

      Article first published online: 26 OCT 2010 | DOI: 10.1002/pssb.201046352

    2. Semi-polar nitride surfaces and heterostructures (pages 561–573)

      André Strittmatter, John E. Northrup, Noble M. Johnson, Mikhail V. Kisin, Philippe Spiberg, Hussein El-Ghoroury, Alexander Usikov and Alexander Syrkin

      Article first published online: 20 OCT 2010 | DOI: 10.1002/pssb.201046422

  10. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Epitaxial approaches

      Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates (pages 574–577)

      Tim Wernicke, Simon Ploch, Veit Hoffmann, Arne Knauer, Markus Weyers and Michael Kneissl

      Article first published online: 10 JAN 2011 | DOI: 10.1002/pssb.201046346

    2. Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults? (pages 578–582)

      Matthias Wieneke, Martin Noltemeyer, Barbara Bastek, Antje Rohrbeck, Hartmut Witte, Peter Veit, Jürgen Bläsing, Armin Dadgar, Jürgen Christen and Alois Krost

      Article first published online: 7 DEC 2010 | DOI: 10.1002/pssb.201046372

    3. Crystal orientation of GaN layers on (1010) m-plane sapphire (pages 583–587)

      Martin Frentrup, Simon Ploch, Markus Pristovsek and Michael Kneissl

      Article first published online: 10 JAN 2011 | DOI: 10.1002/pssb.201046489

    4. Growth and coalescence behavior of semipolar equation image GaN on pre-structured r-plane sapphire substrates (pages 588–593)

      Stephan Schwaiger, Sebastian Metzner, Thomas Wunderer, Ilona Argut, Johannes Thalmair, Frank Lipski, Matthias Wieneke, Jürgen Bläsing, Frank Bertram, Josef Zweck, Alois Krost, Jürgen Christen and Ferdinand Scholz

      Article first published online: 6 SEP 2010 | DOI: 10.1002/pssb.201046336

    5. Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon (pages 594–599)

      Roghaiyeh Ravash, Juergen Blaesing, Thomas Hempel, Martin Noltemeyer, Armin Dadgar, Juergen Christen and Alois Krost

      Article first published online: 9 NOV 2010 | DOI: 10.1002/pssb.201046313

    6. Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces (pages 600–604)

      Holger Jönen, Uwe Rossow, Heiko Bremers, Lars Hoffmann, Moritz Brendel, Alexander Daniel Dräger, Sebastian Metzner, Frank Bertram, Jürgen Christen, Stephan Schwaiger, Ferdinand Scholz, Johannes Thalmair, Josef Zweck and Andreas Hangleiter

      Article first published online: 1 OCT 2010 | DOI: 10.1002/pssb.201046334

    7. High wavelength tunability of InGaN quantum wells grown on semipolar GaN pyramid facets (pages 605–610)

      Clemens Wächter, Alexander Meyer, Sebastian Metzner, Michael Jetter, Frank Bertram, Jürgen Christen and Peter Michler

      Article first published online: 2 NOV 2010 | DOI: 10.1002/pssb.201046369

    8. Characterization

      Stacking fault-related luminescence features in semi-polar GaN (pages 611–615)

      Ingo Tischer, Martin Feneberg, Martin Schirra, Hady Yacoub, Rolf Sauer, Klaus Thonke, Thomas Wunderer, Ferdinand Scholz, Levin Dieterle, Erich Müller and Dagmar Gerthsen

      Article first published online: 10 JAN 2011 | DOI: 10.1002/pssb.201046498

    9. X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures (pages 616–621)

      H. Bremers, A. Schwiegel, L. Hoffmann, H. Jönen, U. Rossow, J. Thalmair, J. Zweck and A. Hangleiter

      Article first published online: 26 OCT 2010 | DOI: 10.1002/pssb.201046335

    10. Characterization of AlGaInN layers using X-ray diffraction and fluorescence (pages 622–626)

      Lars Groh, Christoph Hums, Jürgen Bläsing, Alois Krost and Armin Dadgar

      Article first published online: 19 JAN 2011 | DOI: 10.1002/pssb.201046418

    11. Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (11equation image2) and (10equation image1) pyramid facets (pages 632–637)

      Sebastian Metzner, Frank Bertram, Christopher Karbaum, Thomas Hempel, Thomas Wunderer, Stephan Schwaiger, Frank Lipski, Ferdinand Scholz, Clemens Wächter, Michael Jetter, Peter Michler and Jürgen Christen

      Article first published online: 28 JAN 2011 | DOI: 10.1002/pssb.201046500

    12. Modelling

    13. Green Laser Diodes

      Pros and cons of green InGaN laser on c-plane GaN (pages 652–657)

      Uwe Strauß, Adrian Avramescu, Teresa Lermer, Désirée Queren, Alvaro Gomez-Iglesias, Christoph Eichler, Jens Müller, Georg Brüderl and Stephan Lutgen

      Article first published online: 16 AUG 2010 | DOI: 10.1002/pssb.201046299

    14. Lattice properties and dynamics, diffusion

    15. Nanostructures, thin films, surfaces and interfaces

  11. Original Paper

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Nanostructures, thin films, surfaces and interfaces

      Precipitates of selenium and tellurium in II–VI nanocrystal-doped glass probed by Raman scattering (pages 674–679)

      Yuriy M. Azhniuk, Vasyl V. Lopushansky, Yuriy I. Hutych, Mykola V. Prymak, Alexander V. Gomonnai and Dietrich R. T. Zahn

      Article first published online: 20 JUL 2010 | DOI: 10.1002/pssb.201046112

  12. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Nanostructures, thin films, surfaces and interfaces

    2. Electronic states

      Electronic structure of antimony selenide (Sb2Se3) from GW calculations (pages 700–705)

      Rajasekarakumar Vadapoo, Sridevi Krishnan, Hulusi Yilmaz and Carlos Marin

      Article first published online: 4 OCT 2010 | DOI: 10.1002/pssb.201046225

    3. Structural, electronic, linear, and nonlinear optical properties of ZnCdTe2 chalcopyrite (pages 712–718)

      Tarik Ouahrani, Ali H. Reshak, R. Khenata, H. Baltache, B. Amrani and A. Bouhemadou

      Article first published online: 16 AUG 2010 | DOI: 10.1002/pssb.200945463

    4. Electronic structure of Mg studied by Compton scattering (pages 719–724)

      Grażyna Kontrym-Sznajd, Małgorzata Samsel-Czekała, Maciej Pylak, Ludwik Dobrzyński, Marek Brancewicz, Andrzej Andrejczuk, Eugeniusz Żukowski and Stanisław Kaprzyk

      Article first published online: 15 SEP 2010 | DOI: 10.1002/pssb.201046458

    5. Charge transport phenomena; superconductivity

  13. Frontispiece

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Frontispiece (Phys. Status Solidi B 3/2011)

      Leandro Tosi and A. A. Aligia

      Article first published online: 21 FEB 2011 | DOI: 10.1002/pssb.201140814

      Thumbnail image of graphical abstract

      Spin selective transport in triple quantum dot systems In their article on pp. 732–740, Tosi and Aligia calculate the conductance through a system of three quantum dots under two different sets of conditions that lead to spin filtering effects under an applied magnetic field. In presence of a strong enough spin–orbit coupling, choosing adequately the magnetic flux through the system, either only the spin down or only the spin up is allowed to be transmitted through the system. The image shows the studied setup (three quantum dots coupled to two conducting leads) and the plots of conductance through the system with spin–orbit coupling as a function of applied magnetic flux for spin up (bottom graph) and spin down (top graph) at different temperatures. For example, at low enough temperatures and a flux near 0.6 flux quanta, the conductance is the ideal one for spin down and is negligible for spin up (whereas for a flux near 0.4 flux quanta, the conductance is the ideal one for spin up and is negligible for spin down).

  14. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Feature Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Original Paper
    13. Original Papers
    14. Frontispiece
    15. Original Papers
    1. Magnetic properties; magnetic resonances

    2. Nuclear magnetic resonance and magnetization study of surfactant-coated epsilon-Co nanoparticles (pages 741–747)

      William Hines, Joseph Budnick, David Perry, Sara Majetich, Ryan Booth and Madhur Sachan

      Article first published online: 26 AUG 2010 | DOI: 10.1002/pssb.201046164

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