Back Cover: A model for acceptor doping in ZnO based on nitrogen pair formation (Phys. Status Solidi B 5/2011)
S. Lautenschlaeger, M. Hofmann, S. Eisermann, G. Haas, M. Pinnisch, A. Laufer and B. K. Meyer
Version of Record online: 27 APR 2011 | DOI: 10.1002/pssb.201190015
The back cover image shows the essence of this issue's Editor's Choice article by Stefan Lautenschlaeger et al. (pp. 1217-1221). A complex model for shallow acceptors in ZnO, involving two group V acceptors (i.e., two nitrogen atoms) and one donor (in this case hydrogen), is presented and discussed. As you can see, three different nitrogen confi gurations are presented. One is the isolated NO which might, according to recent results and theoretical calculations, lead to deep acceptor states. The second configuration is the neutral N-H complex. The third possible configuration consists of an acceptor-donor-acceptor complex and may lead to the observed shallow acceptor. The authors discuss the photoluminescence data obtained by ammonia-doped samples with different amounts of nitrogen and hydrogen with respect to their acceptor model.