physica status solidi (b)

Cover image for Vol. 248 Issue 5

May 2011

Volume 248, Issue 5

Pages 1021–1288

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Expert Opinion
    9. Original Papers
    10. Editor's Choice
    11. Original Papers
    12. Information for authors
    1. Front Cover: Spin transport and magnetoresistance in organic semiconductors (Phys. Status Solidi B 5/2011)

      Wiebe Wagemans and Bert Koopmans

      Version of Record online: 27 APR 2011 | DOI: 10.1002/pssb.201190014

      Thumbnail image of graphical abstract

      One of the new challenges in using plastics (and other organic semiconductors) for electronics is using their intrinsic magnetic field dependence. While electrons hop between localized sites, an intriguing interplay arises between the applied magnetic field and local hyperfine fields resulting from the surrounding hydrogen (see schematic illustration on the cover). As a consequence, a sizable room-temperature magnetoresistance at surprisingly low magnetic fields arises. Recent activities are aimed at trying to understand the underlying microscopic mechanisms, and exploring potential applications. Moreover, spin transport in these type of materials, which is crucial for the proper functioning of organic spin valves, can be understood using similar mechanisms. For more details see the Feature Article by Wiebe Wagemans and Bert Koopmans on pp. 1029-1041.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Expert Opinion
    9. Original Papers
    10. Editor's Choice
    11. Original Papers
    12. Information for authors
    1. Back Cover: A model for acceptor doping in ZnO based on nitrogen pair formation (Phys. Status Solidi B 5/2011)

      S. Lautenschlaeger, M. Hofmann, S. Eisermann, G. Haas, M. Pinnisch, A. Laufer and B. K. Meyer

      Version of Record online: 27 APR 2011 | DOI: 10.1002/pssb.201190015

      Thumbnail image of graphical abstract

      The back cover image shows the essence of this issue's Editor's Choice article by Stefan Lautenschlaeger et al. (pp. 1217-1221). A complex model for shallow acceptors in ZnO, involving two group V acceptors (i.e., two nitrogen atoms) and one donor (in this case hydrogen), is presented and discussed. As you can see, three different nitrogen confi gurations are presented. One is the isolated NO which might, according to recent results and theoretical calculations, lead to deep acceptor states. The second configuration is the neutral N-H complex. The third possible configuration consists of an acceptor-donor-acceptor complex and may lead to the observed shallow acceptor. The authors discuss the photoluminescence data obtained by ammonia-doped samples with different amounts of nitrogen and hydrogen with respect to their acceptor model.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Expert Opinion
    9. Original Papers
    10. Editor's Choice
    11. Original Papers
    12. Information for authors
    1. Issue Information

      Version of Record online: 27 APR 2011 | DOI: 10.1002/pssb.201190016

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Expert Opinion
    9. Original Papers
    10. Editor's Choice
    11. Original Papers
    12. Information for authors
  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Expert Opinion
    9. Original Papers
    10. Editor's Choice
    11. Original Papers
    12. Information for authors
  6. Feature Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Expert Opinion
    9. Original Papers
    10. Editor's Choice
    11. Original Papers
    12. Information for authors
    1. Spin transport and magnetoresistance in organic semiconductors (pages 1029–1041)

      Wiebe Wagemans and Bert Koopmans

      Version of Record online: 2 NOV 2010 | DOI: 10.1002/pssb.201046383

    2. Advanced Calculations for Defects in Solids – Electronic Structure Methods

    3. SiO2 in density functional theory and beyond (pages 1061–1066)

      L. Martin-Samos, G. Bussi, A. Ruini, E. Molinari and M. J. Caldas

      Version of Record online: 1 DEC 2010 | DOI: 10.1002/pssb.201046283

    4. Electrostatic interactions between charged defects in supercells (pages 1067–1076)

      Christoph Freysoldt, Jörg Neugebauer and Chris G. Van de Walle

      Version of Record online: 1 DEC 2010 | DOI: 10.1002/pssb.201046289

  7. Expert Opinion

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Expert Opinion
    9. Original Papers
    10. Editor's Choice
    11. Original Papers
    12. Information for authors
    1. High Pressure Semiconductor Physics

  8. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Expert Opinion
    9. Original Papers
    10. Editor's Choice
    11. Original Papers
    12. Information for authors
    1. High Pressure Semiconductor Physics

      Tuning structural and optical properties of blue-emitting polymeric semiconductors (pages 1083–1090)

      Suchi Guha, Meera Chandrasekhar, Ulli Scherf and Matti Knaapila

      Version of Record online: 10 FEB 2011 | DOI: 10.1002/pssb.201000779

    2. Calculations of quasi-particle spectra of semiconductors under pressure (pages 1096–1101)

      N. E. Christensen, A. Svane, M. Cardona, A. N. Chantis, R. Laskowski, M. van Schilfgaarde and T. Kotani

      Version of Record online: 29 MAR 2011 | DOI: 10.1002/pssb.201001202

    3. Time-resolved ultrafast carrier dynamics in CdTe quantum dots under high pressure (pages 1102–1105)

      Bingguo Liu, Chunyuan He, Mingxing Jin, Dajun Ding and Chunxiao Gao

      Version of Record online: 11 APR 2011 | DOI: 10.1002/pssb.201000605

    4. Luminescent properties of tris(2,2′-bipyridine) dichloro ruthenium(II) hexahydrate under high pressure (pages 1106–1110)

      Z. P. Wang, Z. M. Zhang, J. W. Zhang, X. Sun and Z. J. Ding

      Version of Record online: 23 MAR 2011 | DOI: 10.1002/pssb.201000614

    5. Study on phase transition of SrTiO3 by in situ impedance measurement under high pressure (pages 1111–1114)

      Qinglin Wang, Jie Yang, Bao Liu, Cailong Liu, Tingjing Hu, Yan Li, Ningning Su, Dandan Sang, Yonghao Han and Chunxiao Gao

      Version of Record online: 11 APR 2011 | DOI: 10.1002/pssb.201000618

    6. Pressure-induced structural transition in CaF2 nanocrystals (pages 1115–1118)

      Jingshu Wang, Jian Hao, Qiushi Wang, Yunxia Jin, Fangfei Li, Bo Liu, Quanjun Li, Bingbing Liu and Qiliang Cui

      Version of Record online: 23 MAR 2011 | DOI: 10.1002/pssb.201000627

    7. Raman studies of hexagonal MoO3 at high pressure (pages 1119–1122)

      C. C. Zhang, L. Zheng, Z. M. Zhang, R. C. Dai, Z. P. Wang, J. W. Zhang and Z. J. Ding

      Version of Record online: 23 MAR 2011 | DOI: 10.1002/pssb.201000633

    8. X-ray diffraction of cubic Gd2O3/Er under high pressure (pages 1123–1127)

      Xu Zou, Chen Gong, Bingbing Liu, Quanjun Li, Zepeng Li, Bo Liu, Ran Liu, Jing Liu, Zhiqiang Chen, Bo Zou, Tian Cui, Xue Bai and Hongwei Song

      Version of Record online: 18 APR 2011 | DOI: 10.1002/pssb.201000706

    9. The phase transition of Zn0.854Cu0.146O under high pressure (pages 1128–1131)

      Yunxia Jin, Jian Zhang, Pinwen Zhu, Wei Gao and Qiliang Cui

      Version of Record online: 11 APR 2011 | DOI: 10.1002/pssb.201000717

    10. Direct synthesis of sp3-hybridized BCN compound by high pressure and temperature (pages 1132–1134)

      Xuefei Li, Jinghai Yang, Fangfei Li, Qiang Zhou and Guangtian Zou

      Version of Record online: 29 MAR 2011 | DOI: 10.1002/pssb.201000729

    11. High-pressure phase transitions in NaBH4 from first-principles calculations (pages 1139–1142)

      Chunye Zhu, Yanhui Liu, Fubo Tian and Tian Cui

      Version of Record online: 18 APR 2011 | DOI: 10.1002/pssb.201000768

    12. Melting curve of the cI16 sodium at high pressure from ab initio calculations (pages 1143–1148)

      Dawei Zhou, Gang Bao, Xilian Jin, Bingbing Liu and Tian Cui

      Version of Record online: 18 APR 2011 | DOI: 10.1002/pssb.201000800

    13. The structural transition behavior of CdSe/ZnS core/shell quantum dots under high pressure (pages 1149–1153)

      Zepeng Li, Lin Wang, Bingbing Liu, Jinhua Wang, Bo Liu, Quanjun Li, Bo Zou, Tian Cui, Yue Meng, Ho-kwang Mao, Zhenxian Liu and Jing Liu

      Version of Record online: 18 APR 2011 | DOI: 10.1002/pssb.201000802

    14. High-pressure Raman study on CeO2 nanospheres self-assembled by 5 nm CeO2 nanoparticles (pages 1154–1157)

      Bo Liu, Bingbing Liu, Quanjun Li, Zepeng Li, Mingguang Yao, Ran Liu, Xu Zou, Hang Lv, Wei Wu, Wen Cui, Zhaodong Liu, Dongmei Li, Bo Zou, Tian Cui and Guangtian Zou

      Version of Record online: 18 APR 2011 | DOI: 10.1002/pssb.201000807

    15. High pressure Raman study of LiBC (pages 1158–1161)

      Pinwen Zhu, Dandan Han, Ruilian Tang, Nana Li, Wei Gao and Xin Wang

      Version of Record online: 11 APR 2011 | DOI: 10.1002/pssb.201000817

    16. Electrical properties of polycrystalline CaB6 under high pressure and low temperature (pages 1162–1165)

      Yan Li, Jie Yang, Xiaoyan Cui, Tingjing Hu, Cailong Liu, Yongjun Tian, Hongwu Liu, Yonghao Han and Chunxiao Gao

      Version of Record online: 14 APR 2011 | DOI: 10.1002/pssb.201001106

    17. Novel Gain Materials Based on III-V-N Compounds

      Modelling and direct measurement of the density of states in GaAsN (pages 1167–1171)

      M. P. Vaughan, S. Fahy, E. P. O'Reilly, L. Ivanova, H. Eisele and M. Dähne

      Version of Record online: 5 APR 2011 | DOI: 10.1002/pssb.201000700

    18. Influence of high electron concentration on band gap and effective electron mass of InN (pages 1172–1175)

      O. Donmez, M. Yilmaz, A. Erol, B. Ulug, M. C. Arikan, A. Ulug, A. O. Ajagunna, E. Iliopoulos and A. Georgakilas

      Version of Record online: 11 APR 2011 | DOI: 10.1002/pssb.201000780

    19. Analysis of band-anticrossing model in GaNAs near localised states (pages 1176–1179)

      Masoud Seifikar, Eoin P. O'Reilly and Stephen Fahy

      Version of Record online: 7 APR 2011 | DOI: 10.1002/pssb.201000784

    20. Hot carrier relaxation process in InGaN epilayers (pages 1180–1182)

      D. Lagarde, H. Carrère, P.-M. Chassaing, A. Balocchi, X. Marie, N. Balkan and W. J. Schaff

      Version of Record online: 7 APR 2011 | DOI: 10.1002/pssb.201000790

    21. Electron transport in bulk GaAsN (pages 1183–1186)

      N. Vogiatzis and J.M. Rorison

      Version of Record online: 11 APR 2011 | DOI: 10.1002/pssb.201000799

    22. Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green (pages 1187–1190)

      G. R. Mutta, P. Ruterana, J. L. Doualan, M. P. Chauvat, F. Ivaldi, S. Kret, N. A. K. Kaufmann, A. Dussaigne, D. Martin and N. Grandjean

      Version of Record online: 11 APR 2011 | DOI: 10.1002/pssb.201000801

    23. Comparative study of GaAs and GaInNAs/GaAs multi-quantum well solar cells (pages 1191–1194)

      B. Royall, N. Balkan, S. Mazzucato, H. Khalil, M. Hugues and J. S. Roberts

      Version of Record online: 31 MAR 2011 | DOI: 10.1002/pssb.201000774

    24. Hydrogen-mediated nanostructuring of dilute nitride semiconductors (pages 1195–1202)

      Rinaldo Trotta, Antonio Polimeni and Mario Capizzi

      Version of Record online: 5 APR 2011 | DOI: 10.1002/pssb.201000797

    25. Growth of dilute nitrides and 1.3 µm edge emitting lasers on GaAs by MBE (pages 1207–1211)

      S. M. Wang, G. Adolfsson, H. Zhao, Y. X. Song, M. Sadeghi, J. Gustavsson, P. Modh, Å. Haglund, P. Westbergh and A. Larsson

      Version of Record online: 7 APR 2011 | DOI: 10.1002/pssb.201000788

    26. Wavelength selective switching in dilute nitrides multi quantum well photonic band gap waveguides (pages 1212–1215)

      Giovanna Calò, Dimitris Alexandropoulos, Antonella D'Orazio and Vincenzo Petruzzelli

      Version of Record online: 11 APR 2011 | DOI: 10.1002/pssb.201000782

  9. Editor's Choice

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Expert Opinion
    9. Original Papers
    10. Editor's Choice
    11. Original Papers
    12. Information for authors
    1. You have free access to this content
      A model for acceptor doping in ZnO based on nitrogen pair formation (pages 1217–1221)

      S. Lautenschlaeger, M. Hofmann, S. Eisermann, G. Haas, M. Pinnisch, A. Laufer and B. K. Meyer

      Version of Record online: 17 FEB 2011 | DOI: 10.1002/pssb.201046516

  10. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Expert Opinion
    9. Original Papers
    10. Editor's Choice
    11. Original Papers
    12. Information for authors
    1. Materials preparation, manipulation, and structure

      The phase transition and elastic property of osmium carbide under pressure (pages 1222–1226)

      Feng Peng, Dong Chen, Hongzhi Fu and Tao Gao

      Version of Record online: 10 NOV 2010 | DOI: 10.1002/pssb.201046377

    2. Electronegativity-related bulk moduli of crystal materials (pages 1227–1236)

      Keyan Li, Zhongsheng Ding and Dongfeng Xue

      Version of Record online: 12 NOV 2010 | DOI: 10.1002/pssb.201046448

    3. Lattice properties and dynamics, diffusion

    4. First-principles calculation of vibrational properties of B12As2 crystal (pages 1242–1247)

      Zhaochuan Fan, Bin Wang, Xiaoxuan Xu, Xuewei Cao and Yufang Wang

      Version of Record online: 16 NOV 2010 | DOI: 10.1002/pssb.201046406

    5. Electronic states

      Hybrid functionals and electronic structure of high-pressure phase of CdO (pages 1248–1252)

      K. B. Joshi, U. Paliwal and B. K. Sharma

      Version of Record online: 7 OCT 2010 | DOI: 10.1002/pssb.201046332

    6. Localization and screening in GdNi alloy films (pages 1253–1257)

      N. Wu, D. LaGraffe, I. N. Yakovkin and P. A. Dowben

      Version of Record online: 9 NOV 2010 | DOI: 10.1002/pssb.201046420

    7. Charge transport phenomena; superconductivity

    8. Optical properties

    9. Gap-state related photoluminescence in boron carbide (pages 1275–1279)

      Helmut Werheit, Heinz W. Rotter, Sulkhan Shalamberidze, Andreas Leithe-Jasper and Takaho Tanaka

      Version of Record online: 20 OCT 2010 | DOI: 10.1002/pssb.201046342

    10. Magnetic properties; magnetic resonances

  11. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Expert Opinion
    9. Original Papers
    10. Editor's Choice
    11. Original Papers
    12. Information for authors
    1. Information for authors (pages 1287–1288)

      Version of Record online: 27 APR 2011 | DOI: 10.1002/pssb.201140820

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