Back Cover: GaAs–MnAs nanowires (Phys. Status Solidi B 7/2011)
Janusz Sadowski, Aloyzas Siusys, Andras Kovacs, Takeshi Kasama, Rafal E. Dunin-Borkowski, Tomasz Wojciechowski, Anna Reszka and Bogdan Kowalski
Article first published online: 24 JUN 2011 | DOI: 10.1002/pssb.201190021
Sadowski et al. (pp. 1576–1580) investigated different strategies for obtaining nanowires with ferromagnetic properties using molecular beam epitaxy (MBE) grown nanostructures combining GaAs and Mn. The cover images show autocatalytic GaAs:Mn nanowires grown on Si(100) by MBE. The top panel is the transmission electron microscope (TEM) image of an individual nanowire. Below, a scanning electron microscope (SEM) picture of the as-grown nanowires is shown, and the inset displays an energy dispersion X-ray spectroscopy (EDS) composition scan along the nanowire axis. The possibility of obtaining such nanoscale structures by self-assembled growth methods is advantageous in comparison to the methods involving nanolithography techniques, typically used in the semiconductor technology. The obtained nanowires can bring interesting applications for example in nonvolatile memory devices with magnetic information storage.