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physica status solidi (b)

Cover image for Vol. 250 Issue 1

January 2013

Volume 250, Issue 1

Pages 1–208

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
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      Front Cover: The physical principles of terahertz silicon lasers based on intracenter transitions (Phys. Status Solidi B 1/2013)

      S. G. Pavlov, R. Kh. Zhukavin, V. N. Shastin and H.-W. Hübers

      Article first published online: 8 JAN 2013 | DOI: 10.1002/pssb.201390000

      Thumbnail image of graphical abstract

      Many optoelectronic applications of silicon are hampered by the indirect band gap of the material; however, laser transitions between localized impurity levels are attracting attention due to their potential to conquer the otherwise poorly covered terahertz spectral range. Pavlov et al. (pp. 9–36) review the current state-of-the-art of this field. They contrast lasing processes that are attributed to optical transitions between donor states with those due to Raman-type scattering and point to optical-loss mechanisms that are dominant in the terahertz spectral range. The work also elucidates competition of different relaxation channels of the optically pumped systems and the intricate influence of phonons that eventually determine the resulting laser spectra. An optimal doping range exists for these lasers and is a consequence of the interplay between smaller gain for fewer donors and larger impurity broadening in the presence of more dopants. While co-doping with phosphorous and antimony does not improve the efficiency of intracenter lasing, it does allow for stimulated emission at multiple frequencies. Uniaxial stress lowers the laser threshold and magnetic fields provide a way to tune the frequencies of the lasers. The absolute gain is already comparable to current quantum cascade lasers. Further improvement of the pump efficiency of the silicon lasers will lead to a broad application in a spectral range that is not well covered by other laser types.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
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      Back Cover: Investigation of NV centers in diamond nanocrystallites and nanopillars (Phys. Status Solidi B 1/2013)

      Emil Petkov, Cyril Popov, Torsten Rendler, Christo Petkov, Florian Schnabel, Helmut Fedder, Sang-Yun Lee, Wilhelm Kulisch, Johann Peter Reithmaier and Jörg Wrachtrup

      Article first published online: 8 JAN 2013 | DOI: 10.1002/pssb.201390001

      Thumbnail image of graphical abstract

      Color defects in diamond and especially nitrogen-vacancy (NV) centers attract an ever increasing scientific interest due to their spin-controlled properties as a result of which applications in quantum information technology and magnetometry of single spins can be envisioned. The enhancement of the photon emission from NV centers and the collection efficiency rely on their incorporation in optical structures, like photonic crystals, nanopillars, microrings, etc. Petkov et al. (pp. 48–50) investigated NV centers incorporated during hot filament chemical vapor deposition of diamond nanocrystallites and nanocrystalline diamond (NCD) films. From the latter nanopillars with different diameters were prepared applying electron beam lithography (EBL) and inductively coupled plasma reactive ion etching (ICP-RIE) with oxygen. The deposition of either single crystallites or closed films was controlled by the nucleation density on the silicon substrates and the process duration. Optical investigations revealed the presence of ensembles of color centers in both nanostructures. An enhancement of the fluorescence emission by an order of magnitude was observed after the structuring of the NCD films.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Issue Information

      Article first published online: 8 JAN 2013 | DOI: 10.1002/pssb.201390002

  4. Editorial

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
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      NEWS from pss in 2013 (pages 1–2)

      Sabine Bahrs, Ingeborg Stass and Stefan Hildebrandt

      Article first published online: 8 JAN 2013 | DOI: 10.1002/pssb.201341601

  5. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
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      Content (Phys. Status Solidi B 1/2013) (pages 3–6)

      Article first published online: 8 JAN 2013 | DOI: 10.1002/pssb.201341602

  6. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
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      Recent and forthcoming publications in pss (page 7)

      Article first published online: 8 JAN 2013 | DOI: 10.1002/pssb.201341603

  7. Review Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      The physical principles of terahertz silicon lasers based on intracenter transitions (pages 9–36)

      S. G. Pavlov, R. Kh. Zhukavin, V. N. Shastin and H.-W. Hübers

      Article first published online: 17 DEC 2012 | DOI: 10.1002/pssb.201248322

  8. Editor's Choice

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Absence of nonlocal resistance in microstructures of PbTe quantum wells (pages 37–47)

      K. A. Kolwas, G. Grabecki, S. Trushkin, J. Wróbel, M. Aleszkiewicz, Ł. Cywiński, T. Dietl, G. Springholz and G. Bauer

      Article first published online: 17 DEC 2012 | DOI: 10.1002/pssb.201248431

      Thumbnail image of graphical abstract

      It is commonly believed that the ocurrence of nonlocal resistances in macroscopic semiconductor structures is an evidence of an edge-channel conduction. For example, this is a case in the quantum Hall effect, where the conductance occurs exclusively via a pair of edge channels. In the present work, Kolwas et al. show experimentally that an apparent nonlocal signal which occurs in epitaxial structures of PbTe is caused by a parallel conducting layer. Suppression of the parallel conduction in improved structures leads to disappearance of the signal, which confirms that PbTe is a trivial, not a topological, insulator. The authors also give an upper bound for the spin-Hall angle for PbTe/PbEuTe microstructures in the diffusive regime.

  9. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Investigation of NV centers in diamond nanocrystallites and nanopillars (pages 48–50)

      Emil Petkov, Cyril Popov, Torsten Rendler, Christo Petkov, Florian Schnabel, Helmut Fedder, Sang-Yun Lee, Wilhelm Kulisch, Johann Peter Reithmaier and Jörg Wrachtrup

      Article first published online: 10 SEP 2012 | DOI: 10.1002/pssb.201248384

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      Capturing the re-entrant behavior of one-dimensional Bose–Hubbard model (pages 51–58)

      M. Pino, J. Prior and S. R. Clark

      Article first published online: 10 SEP 2012 | DOI: 10.1002/pssb.201248308

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      Crystallization kinetics and thermal stability in Ge–Sb–Se glasses (pages 59–64)

      Wen-Hou Wei, Liang Fang, Xiang Shen and Rong-Ping Wang

      Article first published online: 10 SEP 2012 | DOI: 10.1002/pssb.201248284

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      Intrinsic uncertainty on ab initio phase diagram and compound formation energy calculations: BCC Mo–Fe as a test case (pages 77–85)

      Ney Sodré, Joelson Cott Garcia, Lucy Vitoria Credidio Assali, Pablo Guillermo Gonzales-Ormeño, Peter Blaha, Helena Maria Petrilli and Cláudio Geraldo Schön

      Article first published online: 17 SEP 2012 | DOI: 10.1002/pssb.201248386

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      Optoelectronic properties of ABC-stacked trilayer graphene (pages 86–94)

      Y. M. Xiao, W. Xu, Y. Y. Zhang and F. M. Peeters

      Article first published online: 8 AUG 2012 | DOI: 10.1002/pssb.201248169

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      Influence of indium concentration and growth temperature on the structural and optoelectronic properties of indium selenide thin films (pages 95–102)

      R. Sreekumar, T. H. Sajeesh, T. Abe, Y. Kashiwaba, C. Sudha Kartha and K. P. Vijayakumar

      Article first published online: 19 SEP 2012 | DOI: 10.1002/pssb.201248268

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      Magnetic properties of Ni and Ni–Cu nanoparticles (pages 103–107)

      Vladimir Leontyev

      Article first published online: 27 SEP 2012 | DOI: 10.1002/pssb.201248152

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      Theoretical study of persistent current in a nanoring made of a band insulator (pages 147–159)

      Antónia Mošková, Martin Moško and Jaroslav Tóbik

      Article first published online: 10 SEP 2012 | DOI: 10.1002/pssb.201248066

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      Carrier trapping and recombination in TlGaSe2 layered crystals (pages 160–168)

      Vytautas Grivickas, Andrei Odrinski, Vitalijus Bikbajevas and Karolis Gulbinas

      Article first published online: 10 SEP 2012 | DOI: 10.1002/pssb.201248363

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      SRS in di-glycine nitrate (NH2CH2COOH)2 · HNO3 crystals: Observation of high-gain many-phonon nonlinear interactions (pages 169–179)

      Alexander A. Kaminskii, Oliver Lux, Eiken Haussühl, Hanjo Rhee, Siegfried Haussühl, Hans Joachim Eichler, Hitoki Yoneda, Akira Shirakawa, Ken-ichi Ueda and Jerzy Hanuza

      Article first published online: 19 SEP 2012 | DOI: 10.1002/pssb.201248273

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  10. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Information for authors (pages 207–208)

      Article first published online: 8 JAN 2013 | DOI: 10.1002/pssb.201341604

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