physica status solidi (b)

Cover image for Vol. 250 Issue 4

April 2013

Volume 250, Issue 4

Pages 661–887

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Preface
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Past & Present
    1. You have free access to this content
      Front Cover: High-pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3 (Phys. Status Solidi B 4/2013)

      F. J. Manjón, R. Vilaplana, O. Gomis, E. Pérez-González, D. Santamaría-Pérez, V. Marín-Borrás, A. Segura, J. González, P. Rodríguez-Hernández, A. Muñoz, C. Drasar, V. Kucek and V. Muñoz-Sanjosé

      Article first published online: 18 APR 2013 | DOI: 10.1002/pssb.201390009

      Thumbnail image of graphical abstract

      Topological insulators are attracting increased attention in the last years. Bi2Se3, Bi2Te3, and Sb2Te3 are narrow bandgap semiconductors with tetradymite layered crystal structure (R-3m) at ambient conditions. These materials have been extensively studied along with their alloys due to their promising operation as thermoelectric materials in the temperature range between 300 K and 500 K. However, studies of these layered semiconductors have increased tremendously in the last years since they have been predicted and demonstrated to behave as 3D topological insulators. In particular, a number of high-pressure studies have been performed in recent years in these materials. Manjón et al. (pp. 669–676) review the main results of the high-pressure studies performed in this family of semiconductors, paying special attention to the main characteristics of the pressure-induced electronic topological transition and the three high-pressure structural phases (see cover). More high-pressure studies are still needed to get a full picture of the behavior of these materials in order to turn 3D topological insulators into materials for amazing technological applications. Therefore, future high-pressure studies to be performed on these 3D topological insulators are also commented.

  2. Inside Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Preface
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Past & Present
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      Inside Back Cover: Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations (Phys. Status Solidi B 4/2013)

      M. B. Barbosa, J. N. Gonçalves, A. Redondo-Cubero, S. M. C. Miranda, R. Simon, P. Kessler, M. Brandt, F. Henneberger, E. Nogales, B. Méndez, K. Johnston, E. Alves, R. Vianden, J. P. Araújo, K. Lorenz and J. G. Correia

      Article first published online: 18 APR 2013 | DOI: 10.1002/pssb.201390010

      Thumbnail image of graphical abstract

      Applications of nanomaterials rely on their tunable properties with large-scale integration feasibility. Advantages can be envisaged by merging nanostructures with thin film technologies, where ion implantation can be used as an integrated part of the processes. Still, ion implantation carries along with its benefits undesired intrinsic defects. Two examples of studies were performed by Barbosa et al. (pp. 801–808) with the nanoscopic perturbed angular correlations (PAC) technique that probes the charge density distribution in the surroundings of chosen radioactive nuclei, thus allowing characterizing the probe's real environment at the atomic scale. The chosen studies were ZnO and CdxZn1−xO thin films – aimed to cover luminescence wavelengths from UV to yellow - with implanted 111mCd/111Cd probe, and the technologically relevant high k-factor Ga2O3 nanostructures and Ga2O3 pellets, where Cd is a potential p-type dopant. For each case, the Cd lattice site occupancies and how and to which extent the local environment of the implanted Cd is reconstructed are studied as a function of annealing temperature.

  3. Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Preface
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Past & Present
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      Back Cover: First-principles calculations of point defects in inorganic nanotubes (Phys. Status Solidi B 4/2013)

      Yuri F. Zhukovskii, Sergei Piskunov, Jevgenijs Begens, Jurijs Kazerovskis and Oleg Lisovski

      Article first published online: 18 APR 2013 | DOI: 10.1002/pssb.201390011

      Thumbnail image of graphical abstract

      First-principles calculations have been performed by Zhukovskii et al. (pp. 793–800) to investigate the ground-state properties of monoperiodic boron nitride (BN), TiO2, and SrTiO3 single-walled nanotubes (SW NTs) containing extrinsic point defects. The hybrid exchange-correlation functionals PBE, B3LYP, and B3PW within the framework of density functional theory (DFT) have been applied for large-scale ab initio calculations on NTs with the following substitutional impurities: AlB, PN, GaB, AsN, InB, and SbN in the BN NT, as well as CO, NO, SO, and FeTi in the TiO2 and SrTiO3 NTs, respectively. The variations in formation energies obtained for equilibrium defective nanostructures allow us to predict the most stable compositions, irrespective of the changes in growth conditions. The changes in the electronic structure are analyzed to show the extent of localization of the midgap states induced by defects. Finally, the electronic charge redistribution was calculated in order to explore the intermolecular properties, which show how the reactivity of the NTs under study was affected by doping and orbital hybridization.

  4. Issue Information

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Preface
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Past & Present
    1. You have free access to this content
      Issue Information

      Article first published online: 18 APR 2013 | DOI: 10.1002/pssb.201390012

  5. Contents

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Preface
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Past & Present
    1. You have free access to this content
      Content (Phys. Status Solidi B 4/2013) (pages 661–666)

      Article first published online: 17 APR 2013 | DOI: 10.1002/pssb.201341612

  6. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Preface
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Past & Present
    1. You have free access to this content
  7. Preface

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Preface
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Past & Present
    1. High Pressure Semiconductor Physics

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      High Pressure Semiconductor Physics (page 668)

      Sylvie Contreras, Alejandro R. Goñi, Leszek Konczewicz, Alfonso San Miguel and Peter Y. Yu

      Article first published online: 17 APR 2013 | DOI: 10.1002/pssb.201341614

  8. Feature Article

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Preface
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Past & Present
    1. High Pressure Semiconductor Physics

      You have free access to this content
      High-pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3 (pages 669–676)

      F. J. Manjón, R. Vilaplana, O. Gomis, E. Pérez-González, D. Santamaría-Pérez, V. Marín-Borrás, A. Segura, J. González, P. Rodríguez-Hernández, A. Muñoz, C. Drasar, V. Kucek and V. Muñoz-Sanjosé

      Article first published online: 2 APR 2013 | DOI: 10.1002/pssb.201200672

  9. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Preface
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Past & Present
    1. High Pressure Semiconductor Physics

      Peculiarities in the pressure dependence of photoluminescence in InAlN (pages 677–682)

      Agata Kaminska, Piotr Nowakowski, Grzegorz Staszczak, Tadeusz Suski, Andrzej Suchocki, Jean-François Carlin, Nicolas Grandjean, Robert Martin and Akio Yamamoto

      Article first published online: 3 APR 2013 | DOI: 10.1002/pssb.201200652

    2. Optical properties of InGaN-based LEDs investigated using high hydrostatic pressure dependent techniques (pages 698–702)

      B. G. Crutchley, I. P. Marko, J. Pal, M. A. Migliorato and S. J. Sweeney

      Article first published online: 26 MAR 2013 | DOI: 10.1002/pssb.201200514

    3. Pressure tuning of high-power laser diodes in the 720–1540 nm range (pages 703–707)

      Filip Dybala, Artem Bercha, Mariusz Klimczak, Bernard Piechal, Yurii Ivonyak and Witold A. Trzeciakowski

      Article first published online: 2 APR 2013 | DOI: 10.1002/pssb.201200644

    4. Photoreflectance and photocurrent measurements using pressure tuned laser diodes (pages 708–710)

      Artem Bercha, Bernard Piechal, Filip Dybala, Mariusz Klimczak, Yurii Ivonyak and Witold A. Trzeciakowski

      Article first published online: 5 APR 2013 | DOI: 10.1002/pssb.201200645

    5. Effects of pressure on photo-induced formation of Se and Te clusters in II–VI compounds (pages 711–715)

      G. P. Lindberg, R. E. Tallman, R. Lauck, M. Cardona, X. Liu, J. K. Furdyna and B. A. Weinstein

      Article first published online: 2 APR 2013 | DOI: 10.1002/pssb.201200469

    6. High-pressure synthesis of crystalline boron in B–H system (pages 721–725)

      E. A. Ekimov, J. B. Lebed, V. A. Sidorov and S. G. Lyapin

      Article first published online: 26 MAR 2013 | DOI: 10.1002/pssb.201200493

    7. High pressure infrared and X-ray Raman studies of aluminum nitride (pages 726–731)

      Michael Pravica, Neelanjan Bhattacharya, Yu Liu, John Robinson, Wing-Sing Au, Teruyasu Mizoguchi, Zhenxian Liu and Yuming Xiao

      Article first published online: 25 MAR 2013 | DOI: 10.1002/pssb.201200485

    8. Magnetotransport in Zn1−xMnxSe:Cl under hydrostatic pressure (pages 732–735)

      Steve Petznick, Michael Hetterich and Peter J. Klar

      Article first published online: 2 APR 2013 | DOI: 10.1002/pssb.201200505

    9. Pressure effect on the anomalies of the electric and magnetic properties of diluted magnetic semiconductor CdGeAs2 doped with Mn (pages 736–740)

      Rasul Arslanov, Akhmedbek Mollaev, Ibragimkhan Kamilov, Temirlan Arslanov, Ullubiy Zalibekov, Vladimir Novotortsev, Sergey Marenkin and Igor Troyanchuk

      Article first published online: 2 APR 2013 | DOI: 10.1002/pssb.201200512

    10. High-pressure study of the thermoelectric properties of various oxides (ZnO, Ti2O3, FexOy) and FeAs-based compounds (pages 741–745)

      Natalia V. Morozova, Iuliia A. Khmeleva, Sergey V. Ovsyannikov, Alexander E. Karkin and Vladimir V. Shchennikov

      Article first published online: 2 APR 2013 | DOI: 10.1002/pssb.201200668

    11. Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer (pages 746–749)

      L. H. Dmowski, L. Konczewicz, T. Suski, S. Contreras, H. Lu and W. J. Schaff

      Article first published online: 2 APR 2013 | DOI: 10.1002/pssb.201200508

    12. Local N environment in the dilute nitrides Ga(N,P), Ga(N,As), and Ga(N,Sb) (pages 755–759)

      M. Güngerich, T. Sander, C. Heiliger, M. Czerner and P. J. Klar

      Article first published online: 2 APR 2013 | DOI: 10.1002/pssb.201200458

    13. Leakage current in 808 nm laser diodes analyzed using high hydrostatic pressure and temperature (pages 769–772)

      Artem Bercha, Yurii Ivonyak, Mariusz Klimczak, Filip Dybala, Bernard Piechal, Witold A. Trzeciakowski, Elzbieta Dabrowska, Marian Teodorczyk and Andrzej Malag

      Article first published online: 5 APR 2013 | DOI: 10.1002/pssb.201200646

    14. Physics and Applications of Novel Gain Materials Based on Ni and Bi Containing III–V Compounds

    15. Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states (pages 779–786)

      Giorgio Pettinari, Antonio Polimeni, Mario Capizzi, Hans Engelkamp, Peter C. M. Christianen, Jan C. Maan, Amalia Patanè and Thomas Tiedje

      Article first published online: 11 FEB 2013 | DOI: 10.1002/pssb.201200463

    16. Compound Semiconductors

  10. Feature Article

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Preface
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Past & Present
    1. Defect-induced Effects in Nanomaterials

      You have free access to this content
      First-principles calculations of point defects in inorganic nanotubes (pages 793–800)

      Yuri F. Zhukovskii, Sergei Piskunov, Jevgenijs Begens, Jurijs Kazerovskis and Oleg Lisovski

      Article first published online: 18 MAR 2013 | DOI: 10.1002/pssb.201200817

      Thumbnail image of graphical abstract

      In this Feature Article, Zhukovskii et al. present the results of defect-engineering modeling of boron nitride, titanium dioxide and strontium titanate nanotubes (NTs) using first-principles calculations based on hybrid density functional theory. The variations in formation energies obtained for equilibrium defective nanostructures allow to predict the most stable compositions, irrespective of the changes in growth conditions. The calculated charge-density maps of the different tubular nanostructures containing extrinsic substitutional impurity atoms highlight changes in the charge distribution caused by doping. Increased covalency in defect–host atom bonds may lead to enhanced adsorption, implying that defective NTs can be used in gas-sensing devices. Furthermore, midgap levels positioned inside the optical bandgap of defective NTs make them attractive for bandgap engineering in, for example, photocatalytic applications.

  11. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Preface
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Past & Present
    1. Defect-induced Effects in Nanomaterials

      Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations (pages 801–808)

      M. B. Barbosa, J. N. Gonçalves, A. Redondo-Cubero, S. M. C. Miranda, R. Simon, P. Kessler, M. Brandt, F. Henneberger, E. Nogales, B. Méndez, K. Johnston, E. Alves, R. Vianden, J. P. Araújo, K. Lorenz and J. G. Correia

      Article first published online: 3 APR 2013 | DOI: 10.1002/pssb.201200923

    2. Spectroscopic studies of Tm-doped zirconia nanoparticles (pages 815–820)

      M. R. N. Soares, L. Rino, F. M. Costa and T. Monteiro

      Article first published online: 18 MAR 2013 | DOI: 10.1002/pssb.201200727

    3. Intrinsic and impurity defects in chromium-doped SrTiO3 nanopowders: EPR and NMR study (pages 821–824)

      Igor Bykov, Marina Makarova, Vladimir Trepakov, Alexandr Dejneka, Lesya Yurchenko, Lesya Yurchenko, Aleš Jäger and Lubomir Jastrabik

      Article first published online: 14 MAR 2013 | DOI: 10.1002/pssb.201200871

    4. Charge transfer processes and magnetoresistance in strontium ferromolybdate with dielectric barriers (pages 825–830)

      N. A. Kalanda, L. V. Kovalev, M. L. Zheludkevich, V. M. Garamus, R. Willumeit and N. A. Sobolev

      Article first published online: 5 APR 2013 | DOI: 10.1002/pssb.201200888

    5. Study of defect-related light emission in oxidized silicon nanocrystals (pages 831–836)

      Mauro Falconieri, Enrico Trave, Rosaria D'Amato and Elisabetta Borsella

      Article first published online: 15 MAR 2013 | DOI: 10.1002/pssb.201200893

    6. Enhancement of infrared emission in Er3+, Yb3+ co-doped sodium niobium tellurite nano glass-ceramics (pages 837–842)

      J. Suresh Kumar, K. Pavani, M. P. F. Graça, M. J. Soares and M. A. Valente

      Article first published online: 12 MAR 2013 | DOI: 10.1002/pssb.201200788

    7. Spectroscopy of radiation defects in rutile TiO2 (pages 843–849)

      C. M. M. Rosário, M. P. F. Graça, M. A. Valente, L. C. Costa, J. Rodrigues, T. Monteiro, E. Alves and N. A. Sobolev

      Article first published online: 18 MAR 2013 | DOI: 10.1002/pssb.201200917

  12. Past & Present

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Preface
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Past & Present

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