physica status solidi (b)

Cover image for Vol. 251 Issue 3

March 2014

Volume 251, Issue 3

Pages 481–703

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Original Papers
    9. Information for authors
    1. You have free access to this content
      Theoretical description of charge transport in disordered organic semiconductors (Phys. Status Solidi B 3/2014)

      S. D. Baranovskii

      Version of Record online: 7 MAR 2014 | DOI: 10.1002/pssb.201470116

      Thumbnail image of graphical abstract

      Organic disordered semiconductors (ODS) dominate already today the electrophotographic image recording on the industrial scale and are becoming more and more important for applications in light-emitting diodes, in field-effect transistors, in solar cells and other devices. Charge transport properties of ODS are decisive for all these applications. Many transport properties of ODS were reviewed by Heinz Bässler [Phys. Status Solidi B 175, 15 (1993)], who concluded that charge transport in single-component and multi-component ODS is due to incoherent tunneling (hopping) of carriers via randomly distributed localized states with a Gaussian energy distribution. The conclusion was based on the comparison between experimental data and the results of computer simulations. Theoretical research on charge transport in ODS is still often based on numerical modeling with empirical fitting of the results by analytical expressions using several fitting parameters. Such empirical fitting does not bring, however, a fundamental understanding of the underlying physical processes. In the Review Article by S. D. Baranovskii (pp. 487–525) the emphasis is therefore put on the development of analytical theories for the description of charge transport in ODS. It is shown that wellapproved theoretical tools, used since decades for the description of hopping transport in inorganic disordered materials, are capable to account for the pronounced dependences of carrier mobility on the temperature, on the applied electric field, on the concentration of localized states, and on the concentration of charge carriers also in ODS. Among such tools are the percolation theory, the concept of the transport energy, the concept of the effective temperature and some other approaches reviewed by Baranovskii. It looks almost miraculous that the application of these methods to a model, in which complicated morphology of a disordered organic system is replaced by a set of randomly distributed point-like localization centers with Gaussian distribution of energies, yields a description of almost all experimentally observed features related to charge transport in ODS.

      S. D. Baranovskii is indebted to Jan Oliver Oelerich for preparing the design for the Front Cover.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Original Papers
    9. Information for authors
    1. You have free access to this content
      Pressure-induced sp ferromagnetism in electride-like elemental potassium from first-principles (Phys. Status Solidi B 3/2014)

      Shengjie Dong and Hui Zhao

      Version of Record online: 7 MAR 2014 | DOI: 10.1002/pssb.201470117

      Thumbnail image of graphical abstract

      From a magnetism standpoint, the alkali metals might be thought of as the least likely elements in which to fi nd bulk ferromagnetism since they are archetypal nearly free-electron materials in which each atom contributes a single valence electron to a gas whose effective interaction with the ionic cores is weak at ambient conditions. Nevertheless, theoretical studies have predicted that ferromagnetic K-sc is the most stable phase in the pressure range 20–22 GPa, which forms an electride and exhibits a Stoner-type sp ferromagnetism. Later work illuminated that the occurrence of both ferromagnetism enhancement and collapse is related to the formation of interstitial electron blobs and the deformation of the Fermi surface. Shengjie Dong and Hui Zhao (pp. 527–532) suggest that the geometry-dependent ferromagnetism is related to the strength of ionicity, the existence of a fl at band, the presence of considerable pseudo-anions, and the appearance of a spinresolved Fermi surface topological transition. The pressure-induced electride-like phase of potassium as a potential new member of the sp magnetic family is not only a model object for investigations on the mechanism of magnetism but also a multifunctional material for possible applications in numerous areas.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Original Papers
    9. Information for authors
    1. You have free access to this content
      Issue Information

      Version of Record online: 7 MAR 2014 | DOI: 10.1002/pssb.201470118

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Original Papers
    9. Information for authors
    1. You have free access to this content
      Contents (pages 481–484)

      Version of Record online: 7 MAR 2014 | DOI: 10.1002/pssb.201470119

  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Original Papers
    9. Information for authors
    1. You have free access to this content
  6. Review Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Original Papers
    9. Information for authors
    1. Theoretical description of charge transport in disordered organic semiconductors (pages 487–525)

      S. D. Baranovskii

      Version of Record online: 25 FEB 2014 | DOI: 10.1002/pssb.201350339

      Thumbnail image of graphical abstract

      Organic disordered semiconductors (ODS) dominate already today the electrophotographic image recording on the industrial scale and are becoming more and more important for applications in light-emitting diodes, in field-effect transistors, in solar cells and other devices. Charge transport properties of ODSs are decisive for all these applications. Theory of charge transport in ODS is reviewed with the conclusion that well-approved theoretical tools developed for the description of charge transport in disordered inorganic systems can be successfully applied to describe charge transport in ODS.

  7. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Original Papers
    9. Information for authors
    1. Recombination luminescence in aluminum nitride ceramics (pages 542–548)

      Laima Trinkler and Baiba Berzina

      Version of Record online: 21 OCT 2013 | DOI: 10.1002/pssb.201350090

    2. You have full text access to this OnlineOpen article
    3. Tailoring properties of graphene with vacancies (pages 555–558)

      Alex V. Pokropivny, Yuxiang Ni, Yann Chalopin, Yuri M. Solonin and Sebastian Volz

      Version of Record online: 12 NOV 2013 | DOI: 10.1002/pssb.201300301

    4. Local probe studies in the weakly Jahn–Teller distorted LaMnO3.08 manganite (pages 565–568)

      A. M. L. Lopes, J. G. Correia, V. S. Amaral and J. P. Araújo

      Version of Record online: 14 OCT 2013 | DOI: 10.1002/pssb.201350075

    5. Influence of dielectric environment on the role of spin–orbit interaction for image potentials (pages 593–600)

      Godfrey Gumbs, Oleksiy Roslyak, Danhong Huang and Antonios Balassis

      Version of Record online: 20 OCT 2013 | DOI: 10.1002/pssb.201349263

    6. Kinetic properties of the two-dimensional conducting system formed by CrSi2 nanocrystallites in plane (111) of silicon (pages 601–608)

      V. V. Andrievskii, Yu. F. Komnik, I. B. Berkutov, I. G. Mirzoiev, N. G. Galkin and D. L. Goroshko

      Version of Record online: 18 OCT 2013 | DOI: 10.1002/pssb.201349209

    7. Thermally induced morphological transition of silver fractals (pages 609–622)

      Ilia A. Solov'yov, Andrey V. Solov'yov, Nouari Kébaili, Albert Masson and Catherine Bréchignac

      Version of Record online: 20 OCT 2013 | DOI: 10.1002/pssb.201349254

    8. On reduction of optical losses in semiconductors (pages 642–648)

      Adil-Gerai Kussow and Alkim Akyurtlu

      Version of Record online: 30 OCT 2013 | DOI: 10.1002/pssb.201350102

    9. Pristine and functionalized capped carbon nanotubes under electric fields (pages 649–654)

      Vivian Machado de Menezes, Ronaldo Mota, Ivana Zanella and Solange Binotto Fagan

      Version of Record online: 12 NOV 2013 | DOI: 10.1002/pssb.201349163

    10. Optical characterization of Cd1−xZnxSe nanocrystals grown in borosilicate glass (pages 669–674)

      Yu. M. Azhniuk, M. V. Prymak, V. V. Lopushansky, A. V. Gomonnai and D. R. T. Zahn

      Version of Record online: 14 NOV 2013 | DOI: 10.1002/pssb.201350011

    11. Recombination processes in Te-doped ZnO microstructures (pages 683–688)

      A. Iribarren, P. Fernández and J. Piqueras

      Version of Record online: 18 NOV 2013 | DOI: 10.1002/pssb.201248600

    12. Structural, optical, electrical and low temperature thermoelectric properties of degenerate polycrystalline Cu7Se4 thin films (pages 689–696)

      K. S. Urmila, T. Namitha Asokan, R. R. Philip, V. Ganesan, G. S. Okram and B. Pradeep

      Version of Record online: 18 NOV 2013 | DOI: 10.1002/pssb.201349183

    13. Orbital effects on characteristic lengths in a two-orbital superconductor (pages 697–701)

      Grzegorz Litak, Teet Örd, Küllike Rägo and Artjom Vargunin

      Version of Record online: 6 NOV 2013 | DOI: 10.1002/pssb.201349146

  8. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Review Article
    8. Original Papers
    9. Information for authors
    1. You have free access to this content
      Information for authors (pages 702–703)

      Version of Record online: 7 MAR 2014 | DOI: 10.1002/pssb.201470121

SEARCH

SEARCH BY CITATION