physica status solidi (b)

Cover image for Vol. 251 Issue 6

June 2014

Volume 251, Issue 6

Pages 1105–1287

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Invited Article
    9. Expert Opinion
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Review on TEM analysis of growth twins in nanocrystalline palladium thin films: Toward better understanding of twin-related mechanisms in high stacking fault energy metals (Phys. Status Solidi B 6/2014)

      Hosni Idrissi, Behnam Amin-Ahmadi, Binjie Wang and Dominique Schryvers

      Article first published online: 5 JUN 2014 | DOI: 10.1002/pssb.201470134

      Thumbnail image of graphical abstract

      Transmission electron microscopy including aberration corrected imaging was used in order to unravel the fundamental mechanisms controlling the formation of growth twins and the evolution of twin boundaries under controlled mechanical and hydrogen loading modes in nanocrystalline palladium thin films produced by electron beam evaporation and sputter deposition (see the Feature Article by Hosni Idrissi et al. on pp. 1111–1124). The results show that the growth twins form by dissociation of grain boundaries. The coherency of ∑3 {111} coherent twin boundaries considerably decreases with deformation due to dislocation/twin boundary interactions. The nature of these interactions has been unravelled via careful analysis of the dislocations stored at these boundaries. On the other hand, ∑3 {112} incoherent twin boundaries dissociate under hydrogen cycling into two phase boundaries bounding a new and unstable 9R phase. These mechanisms are mainly related to the stacking fault energy of Pd and thus contribute to a better understanding of twin behaviour in high stacking fault energy nanocrystalline metals and to guide the generation of microstructures with enhanced structural properties in these materials for a wide range of applications.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Invited Article
    9. Expert Opinion
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Mid-IR quantum cascade lasers: Device technology and non-equilibrium Green's function modeling of electro-optical characteristics (Phys. Status Solidi B 6/2014)

      M. Bugajski, P. Gutowski, P. Karbownik, A. Kolek, G. Hałdaś, K. Pierściński, D. Pierścińska, J. Kubacka-Traczyk, I. Sankowska, A. Trajnerowicz, K. Kosiel, A. Szerling, J. Grzonka, K. Kurzydłowski, T. Slight and W. Meredith

      Article first published online: 5 JUN 2014 | DOI: 10.1002/pssb.201470135

      Thumbnail image of graphical abstract

      In the Invited Article on pp. 1144–1157, Bugajski et al. present the development of a technology for mid-infrared (∼9.5 μm) GaAs/AlGaAs and AlInAs/InGaAs/InP quantum cascade lasers (QCLs) and discuss basic characteristics of the lasers fabricated at the Institute of Electron Technology, Warsaw (Poland). The developed GaAs/AlGaAs lasers show record pulse powers of 6 W at 77 K and up to 50 mW at 300 K. Relying on the elaborated and cheap GaAs/AlGaAs technology, these lasers might still have a commercial potential. The authors also report the results of an investigation of strain compensated 4.7 μm AlInAs/InGaAs/InP QCLs. The cover picture shows the XRD ω-2Θ scan of a strain compensated Al0.638In0.362As/Ga0.331In0.669As/InP laser together with the simulated diffraction profile. The close resemblance of both indicates a precise reproduction of design parameters. The regularly spaced peaks are the signature of periodic structure. The TEM picture of the core of the active region (background image) shows that the strain compensated wafers can be grown on InP substrates free of misfit dislocations. Bugajski et al. also emphasize that reliable simulation methods capable of dealing with the complicated physical phenomena are necessary to predict the behavior of QCLs and to optimize their performance. The investigated lasers have been analyzed with the aid of the non-equilibrium Green's function (NEGF) method demonstrating the capability of this approach in predicting basic operational characteristics of the devices.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Invited Article
    9. Expert Opinion
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Issue Information

      Article first published online: 5 JUN 2014 | DOI: 10.1002/pssb.201470136

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Invited Article
    9. Expert Opinion
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Contents (pages 1105–1108)

      Article first published online: 5 JUN 2014 | DOI: 10.1002/pssb.201470137

  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Invited Article
    9. Expert Opinion
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
  6. Feature Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Invited Article
    9. Expert Opinion
    10. Original Papers
    11. Information for authors
    1. Review on TEM analysis of growth twins in nanocrystalline palladium thin films: Toward better understanding of twin-related mechanisms in high stacking fault energy metals (pages 1111–1124)

      Hosni Idrissi, Behnam Amin-Ahmadi, Binjie Wang and Dominique Schryvers

      Article first published online: 14 FEB 2014 | DOI: 10.1002/pssb.201350161

      Thumbnail image of graphical abstract

      Nanocrystalline palladium thin films with nanoscale growth twins have been investigated using transmission electron microscopy in order to unravel the fundamental mechanisms controlling the formation and the evolution of twin boundaries under mechanical and hydrogen loading. The results provide insightful information to better understand the behaviour of growth twins in high stacking fault energy nanocrystalline metallic thin films.

    2. Growth and properties of HgTe quantum wells –A topic review (pages 1125–1132)

      C. R. Becker

      Article first published online: 16 JAN 2014 | DOI: 10.1002/pssb.201350121

      Thumbnail image of graphical abstract

      HgTe quantum wells with an inverted band structure have been predicted to be topological insulators, in which charge carriers with opposite spin move in opposite directions on a given edge of the device in the absence of a magnetic field. Intense interest in this topic has resulted in convincing experimental evidence, which has confirmed this prediction, leading the way to possible applications. Growth details and relevant properties of HgTe quantum wells which include their properties as a topological insulator are reviewed in this article.

    3. Raman scattering as a tool to characterize semiconductor crystals, thin layers, and low-dimensional structures containing transition metals (pages 1133–1143)

      Wojciech Szuszkiewicz, Michel Jouanne, Jean-François Morhange, Makoto Kanehisa, Elżbieta Dynowska, Katarzyna Gas, Elżbieta Janik, Grzegorz Karczewski, Rafał Kuna and Tomasz Wojtowicz

      Article first published online: 30 OCT 2013 | DOI: 10.1002/pssb.201350142

      Thumbnail image of graphical abstract

      Magnetic, diluted magnetic and transition metal doped semiconductors attract a lot of attention as possible constituents of new spintronic devices. Raman spectroscopy belongs to effi cient, non-destructive characterization techniques frequently applied for this group of materials. This short review presents several examples of Raman scattering data obtained for a few typical semiconductors containing Mn or Co. Selected phenomena resulting from the presence of magnetic ions in crystals and low-dimensional structures are demonstrated.

  7. Invited Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Invited Article
    9. Expert Opinion
    10. Original Papers
    11. Information for authors
    1. Mid-IR quantum cascade lasers: Device technology and non-equilibrium Green's function modeling of electro-optical characteristics (pages 1144–1157)

      M. Bugajski, P. Gutowski, P. Karbownik, A. Kolek, G. Hałdaś, K. Pierściński, D. Pierścińska, J. Kubacka-Traczyk, I. Sankowska, A. Trajnerowicz, K. Kosiel, A. Szerling, J. Grzonka, K. Kurzydłowski, T. Slight and W. Meredith

      Article first published online: 22 APR 2014 | DOI: 10.1002/pssb.201350322

  8. Expert Opinion

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Invited Article
    9. Expert Opinion
    10. Original Papers
    11. Information for authors
  9. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Invited Article
    9. Expert Opinion
    10. Original Papers
    11. Information for authors
    1. Application of the paracrystal model to GISAXS analysis of the 3D self-assembled nanoparticle crystals (pages 1169–1177)

      Karol Vegso, Peter Siffalovic, Matej Jergel, Eva Majkova, Teodora Kocsis, Monika Benkovicova, Stefan Luby, Ignac Capek, Jan Perlich and Stephan V. Roth

      Article first published online: 16 APR 2014 | DOI: 10.1002/pssb.201350347

    2. Optical and magnetic resonance study of a-SiCxNy films obtained by magnetron sputtering (pages 1178–1185)

      Dariya Savchenko, Valeriy Kulikovsky, Vladimir Vorlíček, Jan Lančok, Vitalii Kiselov and Ekaterina Kalabukhova

      Article first published online: 3 APR 2014 | DOI: 10.1002/pssb.201451041

    3. High-pressure induced phase formation in the CuGaS2–CuGaO2 chalcopyrite–delafossite system (pages 1192–1196)

      Andrei N. Salak, Aleksandr L. Zhaludkevich, Oleg V. Ignatenko, Aleksey D. Lisenkov, Aleksey A. Yaremchenko, Mikhail L. Zheludkevich and Mário G. S. Ferreira

      Article first published online: 6 APR 2014 | DOI: 10.1002/pssb.201451013

    4. Magnetoresistance in quasi-two-dimensional electron gas at scattering on impurity ions (pages 1197–1201)

      B. M. Askerov, S. R. Figarova, H. I. Huseynov and V. R. Figarov

      Article first published online: 6 APR 2014 | DOI: 10.1002/pssb.201451019

    5. Effects of anisotropy on structural and optical characteristics of LYSO:Ce crystal (pages 1202–1211)

      Dongzhou Ding, Jianhua Yang, Guohao Ren, Martin Nikl, Sheng Wang, Yuntao Wu and Zhiyong Mao

      Article first published online: 6 APR 2014 | DOI: 10.1002/pssb.201350338

    6. Characterization of oxygen impurity in silicon nitride storage layer: A first-principles investigation (pages 1212–1218)

      Jing Luo, Jinlong Lu, Hongpeng Zhao, Yuehua Dai, Qi Liu, Jin Yang, Xianwei Jiang and Huifang Xu

      Article first published online: 6 APR 2014 | DOI: 10.1002/pssb.201350058

    7. High-throughput evaluation in nitrogen doping of amorphous titanium dioxide (pages 1225–1230)

      Barry J. Haycock, Gary Lander, M. Kylee Rice, Kiran Prasai, Binay Prasai, David A. Drabold and James P. Lewis

      Article first published online: 19 APR 2014 | DOI: 10.1002/pssb.201451010

    8. Concentration anomalies of the thermal conductivity in PbTe–PbSe semiconductor solid solutions (pages 1231–1238)

      E. I. Rogacheva, O. S. Vodorez, O. N. Nashchekina and M. S. Dresselhaus

      Article first published online: 22 APR 2014 | DOI: 10.1002/pssb.201350293

    9. Systematic study of the adsorption of thiol molecules on a Au55 nanoparticle (pages 1239–1247)

      Hector Barron, Lucas Fernández-Seivane and X. López-Lozano

      Article first published online: 16 APR 2014 | DOI: 10.1002/pssb.201350183

    10. Optical properties of iron-doped lithium niobate crystal depending on iron content and temperature (pages 1265–1269)

      M. H. Yükselici, D. Bulut, B. Can Ömür, A. Aşıkoğlu Bozkurt and Ç. Allahverdi

      Article first published online: 28 APR 2014 | DOI: 10.1002/pssb.201451071

    11. Spin noise in a quantum dot ensemble: From a quantum mechanical to a semi-classical description (pages 1270–1275)

      Johannes Hackmann, Dmitry S. Smirnov, Mikhail M. Glazov and Frithjof B. Anders

      Article first published online: 16 MAY 2014 | DOI: 10.1002/pssb.201451103

    12. Localization effects and band gap of GaAsBi alloys (pages 1276–1281)

      A. R. Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David and B. Y. Majlis

      Article first published online: 6 MAY 2014 | DOI: 10.1002/pssb.201350311

    13. Ab initio investigation of a new boron nitride allotrope (pages 1282–1285)

      A. A. Kuzubov, L. V. Tikhonova and A. S. Fedorov

      Article first published online: 19 MAY 2014 | DOI: 10.1002/pssb.201350389

  10. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Articles
    8. Invited Article
    9. Expert Opinion
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Information for authors (pages 1286–1287)

      Article first published online: 5 JUN 2014 | DOI: 10.1002/pssb.201470139

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