First-Principles Calculation of Structural and Electronic Properties of Wurtzite AlxGa1—xN, InxGa1—xN, and InxAl1—xN Random Alloys

Authors

  • Z. Dridi,

    1. LERMAT, UMR6508-CNRS, ISMRA, Boulevard Maréchal Juin, 14050 CAEN Cedex, France
    2. LMSSM, Département de Physique, Faculté des Sciences, Université de Sidi-Bel-Abbès, 22000 Sidi-Bel-Abbès, Algérie
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  • B. Bouhafs,

    1. LERMAT, UMR6508-CNRS, ISMRA, Boulevard Maréchal Juin, 14050 CAEN Cedex, France
    2. LMSSM, Département de Physique, Faculté des Sciences, Université de Sidi-Bel-Abbès, 22000 Sidi-Bel-Abbès, Algérie
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  • P. Ruterana

    1. LMSSM, Département de Physique, Faculté des Sciences, Université de Sidi-Bel-Abbès, 22000 Sidi-Bel-Abbès, Algérie
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Abstract

Using first-principles method, we studied the influence of alloying on the structural and electronic properties of the AlxGa1—xN, InxGa1—xN, and InxAl1—xN random alloys in the wurtzite structure. For AlxGa1—xN, the lattice constants a and c are found to follow the Vegard law, while for both InxGa1—xN and InxAl1—xN the lattice parameters, a, exhibit an upward bowing of —0.09 and —0.16 Å, respectively. The calculated band structures for the three alloys show a direct-gap, and exhibit a downward bowing of 0.71, 1.7, and 4.09 eV for AlxGa1—xN, InxGa1—xN, and InxAl1—xN, respectively.

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