Investigation of lattice plane bending in large (0001)SiC crystals using high-energy X-ray technique



Bulk SiC crystals have been investigated using high-energy X-ray technique. The penetration depth of the high-energy X-rays was enough to perform the mapping of the whole crystal bulk in order to analyze the distribution of subgrain boundaries (SGB) and bending of the lattice planes. The full width at half maximum (FWHM) of the rocking curves reflects the structural quality of bulk SiC and correlates to the SGB density. The shift of θBragg when moving the sample in reference to the incident beam reflects the inclination of the lattice planes. A model, which emphasizes the effect of growth interface morphology on SGB density and lattice bending, is presented. The effect of radial temperature gradient on crystal quality is demonstrated presenting a way to reduce structural defects. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)