• 64.70.Nd;
  • 68.37.Lp;
  • 68.65.Fg


We have studied phase separation in Ga0.62In0.38N0.023As/GaAs (001) multi-quantum wells grown at different temperatures in the range 360 ºC–460 ºC. Our results by Transmission Electron Microscopy have shown strain contrasts with 220BF reflection in all the wells, which are more pronounced on increasing the growth temperature. This has been attributed to enhanced phase separation in the alloy. However, contrast modulation was not observed with 002DF reflection. Both results could be explained by the existence of N rich regions and low In segregation regarding the average composition. Experimental and theoretical results point at a large effect of the introduction of N in the phase separation of GaInAsN alloys. However, these models do not explain that the magnitude of the composition modulation increases with the temperature and it is necessary to introduce kinetic factors to predict the phase separation for different growth conditions. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)