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Keywords:

  • 61.10.Nz;
  • 68.55.Jk;
  • 81.05.Ea

Abstract

Structural properties of highly mismatched InGaAs/GaAs (100) heterostructures grown by molecular beam epitaxy are studied using high-resolution X-ray diffraction. The layers are nearly fully relaxed and show closely tetragonal distortion as shown by asymmetric reflections. However, structural defects show an asymmetry of the orthogonal 〈110〉 directions as revealed by reciprocal space maps. Substrate miscut effects are accounted for this difference. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)