Outcome of refinement of the thermal sensitivity Ga0.65In0.35As0.15Sb0.85/GaSb MQW laser

Authors

  • O. Mashoshyna,

    Corresponding author
    1. Lab. “Photonics”, Kharkov National University of Radio Electronics, Lenin av., 14, Kharkov 61166, Ukraine
    • Phone: +380 057 7021 484, Fax: +380 057 021 013
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  • I. Sukhoivanov,

    1. Lab. “Photonics”, Kharkov National University of Radio Electronics, Lenin av., 14, Kharkov 61166, Ukraine
    2. Faculty of Mechanical, Electrical and Electronics Engineering, Guanajuato University, Box 215-A, 36730, Salamanca, Gto., Mexico
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    • Phone: +52464 648 0911, Fax: +52464 647 24 00

  • A. Joullie,

    1. CEM2, UMR-CNRS 5507, Montpellier II University, 34095 Montpellier Cedex 05, France
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  • V. Lysak

    1. Lab. “Photonics”, Kharkov National University of Radio Electronics, Lenin av., 14, Kharkov 61166, Ukraine
    2. Kwangju Institute of Science and Technology, Optoelectronics Lab., Dept. of Info & Comm., A-304, K-JIST, 1 Oryong-dong, Buk-ku, Gwangju, 500-712, Republic of Korea
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Abstract

We discuss an optimization procedure for type-II mid-IR lasers. The QW layer composition was used as the variable parameter. The proposed design combines the suppression of the Auger recombination processes and the improvement of the electron and hole confinement, the characteristic temperature T0 of the strained Ga1–xInxAsySb1–y/GaSb MQW laser during laser operation in the 250–350 K temperature range. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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