TeraHertz detectors based on plasma oscillations in nanometric Silicon Field Effect Transistors



We report on the experiments about detection of the THz radiation by silicon FETs with nanometer gate lengths. The observed photo-responses measured as a function of the gate voltage are all in agreement with the predictions of the Dyakonov-Shur theory. The plasma wave parameters deduced from the experiments allow us to predict also the possibility of resonant detection in THz range by nanometer size silicon devices. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)