TeraHertz detectors based on plasma oscillations in nanometric Silicon Field Effect Transistors

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Abstract

We report on the experiments about detection of the THz radiation by silicon FETs with nanometer gate lengths. The observed photo-responses measured as a function of the gate voltage are all in agreement with the predictions of the Dyakonov-Shur theory. The plasma wave parameters deduced from the experiments allow us to predict also the possibility of resonant detection in THz range by nanometer size silicon devices. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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