Influence of the low energy ion beam milling on the electrical properties of InSb



The paper presents preliminary results of the experiments performed to study the influence of low energy Ar ions on the electrical properties of p-InSb under ion beam milling. We demonstrate that this treatment causes the 2-layer structure with electron conductivity to emerge at the p-InSb surface. The first layer with low mobility electrons is created through the surface amorphisation by ion bombardment. The second layer with higher mobility electrons is a result of crystal lattice damages. The properties of the second layer are time-dependent that indicates the gradual relaxation of damages. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)